The Institute of Scientific and Industrial Research, Osaka University

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HOME > Research Introduction > Division of Information and Quantum Sciences > Department of Quantum System Electronics

Department of Quantum System Electronics

Staff

  • Photo
    Prof.
    A. OIWA
  • Photo
    Assoc. Prof.
    S. HASEGAWA
  • Photo
    Assis. Prof.
    H. KIYAMA
  • Photo
    Assis. Prof.
    T. FUJITA
  • Photo
    Specially Appointed Assis. Prof.
    Y. SAKAI

Content of research

This department studies novel optical, electronic, and spin devices that support the highly-sophisticated information society in the 21st century. Focusing on semiconductor devices, our research fields cover quantum information processing using the quantum mechanical nature of electron spins and photons, and the development of multifunctioned optical, electrical and spin materials and its application to spintronic devices. We study the growth and characterization of high quality materials and perform precise quantum transport measurements. Aim of our research is the realization of novel phenomena emerging in quantum nano-structures that can control the photon, electron and spin degrees of freedom.

Current Research Programs

  1. 1. Nano-level characterization and spin-related quantum transport in semiconductor low dimensional systems
  2. 2. Quantum interface between single photon and single spin and its application to quantum information processing
  3. 3. Novel magnetic semiconductors and their semiconductor spintronic device application.
  4. 4. Wide band-gap semiconductor based materials integration and their device applications.

Figure / Graph

  • Fig.1
    Schematic image of conversion from single photons to single electron spins in a double quantum dot with photon irradiation. Charge and spin of the single photoelectron are sensitively detected by a nearby quantum dot as a charge detector.
  • Fig.2
    We have synthesized new ferromagnetic semiconductor GaCrN. Curie temperature is above 130°C. Tunnel magneto-resistance effect was also observed. GaCrN is promising for semiconductor spintronics.

VIDEO INTRODUCTION

The Institute of Scientific and Industrial Research, Osaka University

contact home japanese
HOME > Research Introduction > Division of Information and Quantum Sciences > Department of Quantum System Electronics

Department of Quantum System Electronics

Staff

  • Photo
    Prof.
    A. OIWA
  • Photo
    Assoc. Prof.
    S. HASEGAWA
  • Photo
    Assis. Prof.
    H. KIYAMA
  • Photo
    Assis. Prof.
    T. FUJITA
  • Photo
    Specially Appointed Assis. Prof.
    Y. SAKAI

Content of research

This department studies novel optical, electronic, and spin devices that support the highly-sophisticated information society in the 21st century. Focusing on semiconductor devices, our research fields cover quantum information processing using the quantum mechanical nature of electron spins and photons, and the development of multifunctioned optical, electrical and spin materials and its application to spintronic devices. We study the growth and characterization of high quality materials and perform precise quantum transport measurements. Aim of our research is the realization of novel phenomena emerging in quantum nano-structures that can control the photon, electron and spin degrees of freedom.

Current Research Programs

  1. 1. Nano-level characterization and spin-related quantum transport in semiconductor low dimensional systems
  2. 2. Quantum interface between single photon and single spin and its application to quantum information processing
  3. 3. Novel magnetic semiconductors and their semiconductor spintronic device application.
  4. 4. Wide band-gap semiconductor based materials integration and their device applications.

Figure / Graph

  • Fig.1
    Schematic image of conversion from single photons to single electron spins in a double quantum dot with photon irradiation. Charge and spin of the single photoelectron are sensitively detected by a nearby quantum dot as a charge detector.
  • Fig.2
    We have synthesized new ferromagnetic semiconductor GaCrN. Curie temperature is above 130°C. Tunnel magneto-resistance effect was also observed. GaCrN is promising for semiconductor spintronics.

VIDEO INTRODUCTION