| |
2010年以降はこちら
・2009年
| 論文 |
R. Brunner, H. Kobayashi, M. Kucera, M. Takahashi, J. Rusnak, and E. Pincik,
Photoluminescence of passivated a-Si:H, Mater. Sci. Forum 609 (2009) 281-285.
[DOI: 10.4028/www.scientific.net/MSF.609.281]
W.-B. Kim, T. Matsumoto, and H. Kobayashi, Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration
nitric acid, J. Appl. Phys. 105 (2009) 103709-1-6.
[DOI: 10.1063/1.3130596]
S. Jurecka, H. Kobayashi, M. Takahashi, R. Brunner, M. Madani, and E. Pincik,
On topographic properties of semiconductor surfaces and thin film systems,
Mater. Sci. Forum 609 (2009) 275-279.
[DOI: 10.4028/www.scientific.net/MSF.609.275].
J. Rusnak, M. Ruzinsky, K. Imamura, T. Matsumoto, M. Stefecka, M. Takahashi,
H. Kobayashi, and E. Pincik, Investigation of deep interface traps in very-thin
oxide/Si structures prepared at low temperatures using chemical solutions,
Mater. Sci. Forum 609 (2009) 123-127.
[DOI: 10.4028/www.scientific.net/MSF.609.123]
E. Pincik, H. Kobayashi, R. Brunner, M. Takahashi, J. Rusnak, and M. Jergel, On similar electrical, optical and structural properties of MOS structures prepared on a-Si:H/c-Si, porous silicon/c-Si, and c-Si, Mater. Sci. Forum 609 (2009) 11-25.
[DOI: 10.4028/www.scientific.net/MSF.609.11]
S. Jurecka, M. Jureckova, F. Chovanec, H. Kobayashi, M.Takahashi, M. Mikula,
and E. Pincik, On the tpographic and optical properties of
SiC/SiO2 surface, Cent. Eur. J. Phys. 7 (2009) 321-326.
[DOI: 10.2478/s11534-009-0021-0] (Open Access)
P. Bury, H. Kobayashi, M. Takahashi, K. Imamura, P. Sidor, and F. Cermobila, Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation, Cent. Eur. J. Phys. 7 (2009) 237-241.
[DOI: 10.2478/s11534-009-0029-5] (Open Access)
M. Takahashi, T. Shishido, H. Iwasa, and H. Kobayashi, Passivation of defect
states in surface and edge regions on pn-junction Si solar cells by use
of hydrogen cyanide solutions, Cent. Eur. J. Phys. 7 (2009) 227-231.
[DOI: 10.2478/s11534-009-0025-9]
K. Imamura, M. Takahashi, S. Imai, and H. Kobayashi, Band alignment of
SiO2/Si structure formed with nitric acid vapor below 500ºC, Surf. Sci. 603
(2009) 968-972.
[DOI: 10.1016/j.susc.2009.01.026]
|
| 著書・総説 |
T. Matsumoto, Asuha, W.-B. Kim, M. Yamada, S Imai, S. Terakawa, and H.
Kobayashi, Low temperature formation of SiO2 thin films by nitric acid
oxidation of Si (NAOS) and application to thin film transistor (TFT), Microelectron.
Eng. 86 (2009) 1939-1941.
|
| 招待講演 |
T. Matsumoto, T. Iwata. S. Terakawa and H. Kobayashi, Nitric acid oxidation
of Al thin film to form Al2O3/Al structure at room temperature, Progress
in Surface, Interface and Thin Film Science 2009, Florence, Italy, Nov. 16-19, 2009.
M. Takahashi, Local structures around nickel contaminants on SiO2 surfaces
and mechanism of nickel removal by dilute hydrocyanic acid aqueous solutions,
Progress in Surface, Interface and Thin Film Science 2009, Florence, Italy,
Nov. 16-19, 2009.
H. Kobayashi, Nitric acid oxidation of Si
(NAOS) method for the formation of gate oxides in TFT, Progress in Surface,
Interface and Thin Film Science 2009, Florence, Italy, Nov. 16-19, 2009.
H. Kobayashi, Defect Passivation Etch-less
Cleaning for Semiconductor Devices: Zero Emission Process, International
Symposium on Advanced Ceramics and Technology for Sustainable Energy
Application, Taipei, Taiwan, Nov. 1-4, 2009.
M. Takahashi, Semiconductor surface
cleaning by ppm order-defect passivation etchless solutions, VI International
Workshop on Semiconductor Surface Passivation, Zakopane, Poland, Sep. 13-16,
2009.
H. Kobayashi, Nitric acid oxidation of Si method for fabrication of Si/SiO2
structure at 120˚C and its application to thin film transistors, VI International
Workshop on Semiconductor Surface Passivation, Zakopane, Poland, Sep. 13-16,
2009.
H. Kobayashi, Defect passivation etch-less cleaning method for improvement
of Si solar cell characteristics, The 6th International Conference on High-Performance
Ceramics, Harbin, China, Aug. 16-19, 2009.
|
| 口頭発表 |
東裕子，高橋昌男，岩佐仁雄，小林光，稀薄なHCN水溶液を用いるSiO2表面の汚染銅除去，第29回表面科学会学術講演会，東京，2009年10月27日～29日．
高橋昌男，東裕子，劉玥伶，小林光，HCN水溶液によるSiO2表面の吸着Ni除去機構，2009年秋季日本物理学会応用物理学会学術講演会，熊本，2009年9月25日～28日．
高橋昌男，東裕子，劉玥伶，小林光，HCN水溶液によるSiO2表面の吸着Ni除去機構，2009年秋季日本物理学会応用物理学会学術講演会，熊本，2009年9月25日～28日．
岩田隆，松本健俊，寺川澄雄，小林光，硝酸酸化法による
Al2O3/Al構造の室温形成，2009年秋季日本物理学会応用物理学会学術講演会，熊本，2009年9月25日～28日．
金 佑柄，松本健俊，小林 光，98%硝酸で形成した低リーク電流を持つ極薄SiO2/Si構造，2009年秋季日本物理学会応用物理学会学術講演会，熊本，2009年9月25日～28日．
M.K. Mazumder, W.-B. Kim, Asuha, T. Matsumoto and H. Kobayashi, Low temperature
formation of ultrathin SiO2 films on Si surfaces for gate oxide of transistors
by nitric acid oxidation of Si (NAOS) method, The 17th Conference of Crystal
Growth and Epitaxy, Lake Geneva, USA, Aug. 10-13, 2009.
松本健俊，山田幹浩，辻博史，寺川澄雄，小林光，硝酸酸化を用いたゲート絶縁膜の形成による薄膜トランジスタの低電圧化，第70回応用物理学関係連合講演会，富山，2009年9月8日～11日．
高橋昌男，岩佐仁雄，小林光，希薄な欠陥消滅型半導体洗浄液によるSiO2表面上の汚染ニッケル除去反応，第70回応用物理学関係連合講演会，富山，2009年9月8日～11日．
T. Matsumoto, W.-B. Kim, T. Yanase, Y. Fukaya, Asuha, M. Takahashi and
H. Kobayashi，Low temperature formation of SiO2 thin films by nitric acid
oxidation of Si (NAOS) and application to thin film transistor (TFT), INFOS2009,
Cambridge, UK, Jun. 29-Jul. 1, 2009．
金佑柄，西山雅祥，小林光，SiO2/Si構造のSi 2pスペクトル：金属オーバーレイヤーによるチャージングの防止，第56回応用物理学関係連合講演会，つくば，2009年3月30日～4月2日．
松本健俊，山田幹浩，長山，寺川澄雄，小林光，短時間共沸硝酸酸化法によりSi(100)上に形成した低リーク電流をもつ極薄酸化膜，第56回応用物理学関係連合講演会，つくば，2009年3月30日～4月2日．
金佑柄，松本健俊，小林 光，98%硝酸蒸気で形成した低リーク電流を持つ極薄SiO2/Si構造，第56回応用物理学関係連合講演会，つくば，2009年3月30日～4月2日．
柳瀬隆，松本健俊，小林光，新規硝酸酸化法による低リーク電流をもつSiO2/Si構造の低温形成，第56回応用物理学関係連合講演会，つくば，2009年3月30日～4月2日 |
ポスター
発表 |
Y. Fukaya, Low temperature fabrication of thick SiO2
layer using modified nitric acid oxidation of silicon (NAOS) method, Progress in Surface, Interface and Thin Film Science 2009,
Florence, Italy, Nov. 16-19, 2009.
W.-B.
Kim, Electrical and physical properties of ultrathin
(<=1.5 nm) SiO2 layer fabricated with high concentration nitric
acid (HNO3), Progress in Surface, Interface and Thin Film Science 2009,
Florence, Italy, Nov. 16-19, 2009.
S.
Imai, HNO3 concentration dependence of
electrical characteristics for SiO2/Si structure fabricated by
nitric acid oxidationmethod at 120ºC, Progress in Surface, Interface and Thin Film Science 2009, Florence,
Italy, Nov. 16-19, 2009.
T. Matsumoto, W.-B. Kim, T. Yanase, Y.
Fukaya, Asuha, M. Takahashi and H. Kobayashi, Nitric acid
oxidation of Si (NAOS) method to form gate insulators in Si devices at 120°C, International
Symposium of Post-Silicon Materials and Devices Research Alliance Project, Osaka,
Japan, Sep.
5-6, 2009.
T. Matsumoto, M.
Yamada, H. Tsuji, S. Imai, S. Terakawa and H. Kobayashi, Stacked
gate oxide in thin film transistors (TFTs) formed by thee nitric acid oxidation
of Si (NAOS) method,
The 5th Handai Nanoscience and Nanotechnology
International Symposium, Osaka, Japan, Sep. 1-3, 2009.
Y. Higashi, M. Takahashi, H. Iwasa, and H.
Kobayashi, New semiconductor cleaning method by use of ppm order HCN solutions,
The 12th SANKEN International Symposium, Osaka, Jan. 22, 2009.
T. Matsumoto, W.-B. Kim, T. Yanase, Y.
Fukaya, Asuha, M. Takahashi, and H. Kobayashi, Nitric acid oxidation of Si
(NAOS) method to form gate insulators in Si devices at 120°C, The 12th SANKEN
International Symposium, Osaka, Jan. 22, 2009. |
・2008年
| 論文 |
E. Pincik, R. Brunner, H. Kobayashi, M. Takahashi, and M. Kucera, Photoluminescence
of very thin oxide/a-Si:H structures passivated in HCN solutions, Appl.
Surf. Sci. 254 (2008) 3710-3714.
M. Takahashi, Y.-L. Liu, H. Narita, and H.
Kobayashi, Si cleaning method without surface morphology change by cyanide
solutions, Appl. Surf. Sci. 254 (2008) 3715-3720.
S.-S. Im, S. Terakawa, H. Iwasa, and H. Kobayashi, Nitric Acid Oxidation Method to Form SiO2/3C-SiC Structure at 120 °C, Appl. Surf. Sci. 254 (2008) 3667-3671.
M. Takahashi, S.-S. Im, M. Madani, and H.
Kobayashi, Nitric acid oxidation of 3C-SiC to fabricate MOS diodes with a low
leakage current density, J. Electrochem. Soc. 155 (2008) H47-51.
H. Narita, M. Takahashi, H. Iwasa, and H.
Kobayashi, Complete removal of copper contaminants on bare silicon surfaces by
use of HCN aqueous solutions, J. Electrochem. Soc. 155 (2008) H103-H107.
S. Imai, S. Mizushima, Asuha, W.-B. Kim, and H. Kobayashi, Properties of
thick SiO2/Si structure formed at 120°C by use of two-step nitric acid oxidation
method, Appl. Surf. Sci. 254 (2008) 3685-3689.
H. Kobayashi, K. Imamura, K. Fukayama, S.-S. Im, O. Maida, Y.-B. Kim, H.-C. Kim, and D.-K. Choi, Complete prevention of reaction at
HfO2/Si interfaces by 1 nm silicon nitride layer, Surf. Sci. 602 (2008) 1948-1953.
E.
Pincik, H. Kobayashi, R. Brunner, M. Takahashi, Yueh-Ling Liu, K. Imamura, M.
Jergel, and J. Rusnák, Passivation of defect states in Si-bnased and GaAs
structures, Appl. Surf. Sci. 254 (2008) 8059-8066.
Photoluminescence
of very thin oxide/a-Si:H structures passivated in HCN solutions, E. Pincik, R.
Brunner, H. Kobayashi, M. Takahashi, M. Kucera, Appl. Surf. Sci. 254 (2008) 3710-3714.
W.-B. Kim, Asuha, T. Matsumoto, and H. Kobayashi, Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics
formed by nitric acid oxidation method, Appl. Phys. Lett. 93 (2008) 072101-1-3.
M. Madani, Y.-L. Liu, M. Takahashi, H.
Iwasa, and H. Kobayashi, SiC cleaning method by use of dilute HCN aqueous
solutions, J. Electrochem. Soc. 155 (2008) H895-H898.
S. Mizushima, S. Imai, Asuha, M. Tanaka,
and H. Kobayashi, Nitric acid method for fabrication of gate oxides in TFT,
Appl. Surf. Sci. 254 (2008) 3685-3689. |
| 著書・総説 |
髙橋昌男, 小林光, シリコン材料表面の金属除去用新洗浄溶液, クリーンテクノロジー, 18 (2008) 42-46.
松本健俊, アスハ, 今村健太郎, 小林光, 硝酸溶液を用いたSi表面上へのSiO2酸化薄膜の低温形成と酸化膜の電気特性評価, 表面科学 29 (2008) 498-502.
茅陽一, 堂免一成, 井上春夫, 小林光, 河本邦仁, 松本要, 清水浩, 次世代エネルギー研究最前線, アドスリー（2008年11月).
|
| 招待講演 |
H. Kobayashi, T. Matsumoto, M. Yamada, S.
Terakawa, S. Imai, Nitric acid oxidation of Si (NAOS) method for fabrication of
ultra-low power thin film transistors, New Processing and
Nanostructure/property Relationship for Multi Functional Materials, Awaji,
Japan, Dec. 14-16, 2008.
M. Takahashi, Passivation of defect states in surfaces and edge regions
on pn-junction Si solar cells by use of hydrogen cyanide solutions, 6th
Solid State Surfaces and Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
H. Kobayashi, One-step and two-step NAOS methods for fabrication of SiO2/Si
structure with excellent electrical characteristics, 6th Solid State Surfaces
and Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
H. Kobayashi, Low temperature nitric acid
oxidation of Si (NAOS) for fabrication of gate oxides in LSI and TFT, The 1st
International Symposium on Hybrid Materials and Processing, Busan, Korea, Oct.
27-29, 2008.
小林光，シリコン系太陽電池の欠陥制御と高効率化，日本化学会東京講演会，東京，2008年6月27日.
M. Takahashi, Surface cleaning and defect
passivation by the use of cyanide solutions, 1st International Conference on
Thin Films and Porous Materials, Zeralda, Algiers, May 19-22, 2008.
H. Kobayashi, Nitric acid oxidation of Si
at 120°C to fabricate MOS Structure with excellent electrical characteristics,
1st International Conference on Thin Films and Porous Materials, Zeralda,
Algiers, May 19-22, 2008. |
| 口頭発表 |
東裕子，高橋昌男，岩佐仁雄，小林光，極低濃度欠陥消滅型半導体洗浄液によるSiO２表面上の汚染Cuの除去，表面・界面スペクトロスコピー2008，大阪，2008年12月5～6日．
松本健俊，金 佑柄，長山，今村健太郎，髙橋昌男，小林 光，硝酸酸化法と欠陥消滅型洗浄法を用いた新規半導体デバイスの開発，表面・界面スペクトロスコピー2008，大阪，2008年12月5～6日．
P. Bury, H. Kobayashi, M. Takahashi, P. Sidor, and P. Hockicko, Acoustic
spectroscopy of Si/SiO2 structures with ultrathin SiO2 layers formed with nitric acid oxidation, 6th Solid State Surfaces and
Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
M. Takahashi, Y. Higashi, H. Iwasa, and H.
Kobayashi, Semiconductor cleaning by use of hydrocyanic acid solutions with
extremely low concentrations, International Symposium on Surface Science and
Nanotechnology, Tokyo, Japan, Nov. 9-13, 2008.
M. Madani, Y.-L. Liu, M. Takahashi, H.
Iwasan and H. Kobayashi, SiC cleaning method by use of dilute HCN aqueous
solutions, International Symposium on Surface Science and Nanotechnology,
Tokyo, Japan, Nov. 9-13, 2008.
W.-B. Kim, T. Matsumoto, and H. Kobayashi, Ultrathin SiO2/Si(111) structure with low leakage current density formed by nitric acid oxidation method, International Symposium on Surface Science and Nanotechnology, Tokyo, Japan, Nov. 9-13, 2008.
髙橋昌男，マダニ・モハマド，劉玥伶，岩佐仁雄，小林光，HCN水溶液による4H-SiC表面上の吸着金属の完全除去，日本物理学会2008年秋季大会，岩手，2008年9月20日～23日．
柳瀬隆，髙橋昌男，松本健俊，岩佐仁雄，寺川澄雄，小林光，新規の硝酸法によるSiO2/Si構造の低温形成，日本物理学会2008年秋季大会，岩手，2008年9月20日～23日．
東裕子，髙橋昌男，岩佐仁雄，小林光，極低濃度欠陥消滅型半導体洗浄液によるSiO2表面上の汚染Cuの除去，第69回応用物理学会学術講演会，愛知，2008年9月2日～5日．
金佑柄，松本健俊，小林 光，98%硝酸で形成した低リーク電流を持つ極薄SiO2/Si構造，第69回応用物理学会学術講演会，愛知，2008年9月2日～5日．
松本健俊(大阪大学)，長山，今村健太郎，髙橋昌男，小林光，二段階硝酸酸化法による～10nm SiO2/Si構造の120°Cでの創製，第55回応用物理学関係連合講演会，船橋，2008年3月27日～30日．
金佑柄，松本健俊，髙橋昌男，小林光，硝酸酸化法と水素処理で形成した低リーク電流の極薄SiO2/Si(111)構造，第55回応用物理学関係連合講演会，船橋，2008年3月27日～30日．
マダニ・モハマド，髙橋昌男，岩佐仁雄，小林光，欠陥消滅型半導体洗浄液とRCA洗浄液による4H-SiC上の金属汚染の除去，第55回応用物理学関係連合講演会，船橋，2008年3月27日～30日．
金佑柄，松本健俊，小林光，硝酸酸化法による低リーク電流を持つ極薄SiO2/Si(111)超平坦界面構造の創製，日本物理学会第63回年次大会，東大阪，2008年3月22日～26日．
髙橋昌男，劉 玥伶，成田比呂晃，小林光，HCN溶液によるシリコン表面上の吸着銅の完全除去と表面形態制御，日本物理学会第63回年次大会，東大阪，2008年3月22日～26日． |
ポスター
発表 |
T. Yanase, M. Takahashi, T. Matsumoto, H.
Iwasa, S. Terakawa, and H. ｖKobayashi, SiO2/Si structure fabrication at low
temperature by novel nitric acid method, 6th Solid State Surfaces
and Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
J. Rusnák, K. Imamura, T. Matsumoto, H. Kobayashi, and E. Pinčík, Investigation
of very thin SiO2/Si
structures by charge version of DLTS using small excitation voltage steps, 6th
Solid State Surfaces and Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
E. Pinčík, H. Kobayashi, R. Brunner, M.
Takahashi, K. Imamura, M. Kučera, T. Shishido, J. Rusnák, T. Matsumoto, M.
Jergel, M. Madani, M. Mikula, M. Uragou, S. Jurečka, and M. Kopaní，6th Solid State Surfaces and
Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
M. Madani, Y.-L. Liu, M. Takahashi, H.
Iwasa, and H. Kobayashi, SiC cleaning method by use of dilute HCN aqueous
solutions, 6th Solid State Surfaces and Interfaces, Smolenice,
Slovakia, Nov. 24-27, 2008.
S. Imai, K. Imamura, H. Kobayashi, HNO3
concentration dependence of electrical characteristics of SiO2/Si
structure formed by NAOS method, 6th Solid State Surfaces and
Interfaces, Smolenice, Slovakia, Nov. 24-27, 2008.
R. Brunner, H. Kobayashi, M. Kučera, M.
Takahashi, M. Jergel, and E. Pinčík, Non-Gaussian photoluminescence peaks of
thin a-Si:H layers, 6th Solid State Surfaces and Interfaces,
Smolenice, Slovakia, Nov. 24-27, 2008.
T. Matsumoto, W.B. Kim, J. Rusnák, K.
Imamura, Asuha, S. Imai, E. Pinčík* and H. Kobayashi, Low
temperature formation of SiO2/Si structures for LSI and TFT by
nitric acid oxidation of Si (NAOS) method, International Symposium on Surface
Science and Nanotechnology, Tokyo, Japan, Nov. 9-13, 2008.
T. Matsumoto, Asuha, S. Imai, S. Mizushima,
M. Takahashi, J. Rusnák, K. Imamura, E. Pinčík, H. Kobayashi, Nitric Acid
Oxidation of Si (NAOS) to Improve Si device characteristics and Application to
Thin Film Transistors, 4th Handai Nanoscience and Nanotechnology
International Symposium, Osaka, Japan, Sep. 29-Oct. 1, 2008.
M. Takahashi, H. Narita, T. Shishido, H.
Iwasa, and H. Kobayashi, Removal of copper adsorbates from silicon surfaces by
the use of semiconductor cleaning solutions with capability of defect
passivation, 11th SANKEN, 6th Nanotechnology Center, and 1st MSTEC
International Symposium, Awaji, Japan, Feb. 2-4, 2008.
|
| 新聞発表 |
|
・2007年
| 論文 |
E. Pincik, H. Kobayashi, M. Takahashi, R. Brunner, S. Jurecka, and J. Rusnak,
On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts
with plasma or liquid solution, Cent. Eur. J. Phys. 5 (2007) 428-445.
E. Pincik, H. Kobayashi, R. Hajossy, H.
Gleskova, M. Takahashi, M. Jergel, R. Brunner, L. Ortega, M. Kucera, M. Kral,
and J. Rusnak, On interface properties of ultra-thin and very-thin oxide/a-Si:H
structures prepared by oxygen based plasmas and chemical oxidation, Appl. Surf.
Sci. 253 (2007) 6697-6715.
Y-L. Liu, M. Takahashi and H. Kobayashi, Mechanism
of Ni removal from Si materials using hydrogen cyanide aqueous solutions, J.
Electrochem. Soc. 154 (2007) H16-19.
|
| 著書・総説 |
毎田修, 岡藤麻子, 小林克稔, 小林光, Al2O3微粒子を用いた光閉じ込め構造を有するa-Si太陽電池の作製, 真空 50 (2007) 534-536.
|
| 招待講演 |
H. Kobayashi, Improvement of solar cell and
MOS characteristics by new defect passivation and metal removal method, 9th
International Symposium on Eco-materials Processing and Design, Masan, Korea,
Jan. 10-14, 2008.
H. Kobayashi, M. Takahashi, and H. Iwasa,
Defect passivation etch-less cleaning for semiconductor devices: Zero emission
process. International Symposium on Advanced Ceramics and Technology for
Sustainable Energy Applications, Pingtung,
Taiwan, Nov.
4-7, 2007.
M. Takahashi, Y.-L. Liu, and H. Kobayashi,
Surface chemistry in Si cleaning with cyanide solutions, 5th International
Workshop on Semiconductor Surface Passivation, Zakopane, Poland,
Sep. 16-19, 2007.
E. Pinčík, H. Kobayashi, R. Brunner, M.
Takahashi, Y.-L. Liu, K. Imamura, and J. Rusnák, On formation and passivation
of defect states in Si- and GaAs-based semiconductor structures, 5th
International Workshop on Semiconductor Surface Passivation, Zakopane, Poland,
Sep. 16-19, 2007.
H. Kobayashi, Asuha, T. Mastsumoto, and M.
Takahashi, Osaka University,
Nitric acid oxidation of Si and SiC for the low temperature fabrication of MOS
structure, 5th International Workshop on Semiconductor Surface Passivation, Zakopane, Poland,
Sep. 16-19, 2007.
小林光、LSI作製に関わる革新的技術、世界と共に発展するための中核技術、IMAGINEセミナー、大阪、2007年3月8日～9日.
H. Kobayashi, New defect passivation method
for solar cells, The 8th International Symposium on Eco-Materials
Processing and Design, Kitakushu, Japan, Jan. 11-14, 2007.
|
| 口頭発表 |
松本健俊，アスハ，今村健太郎，髙橋昌男，小林光，共沸硝酸を用いたSi表面の低温酸化と酸化膜の電気特性，第27回表面科学講演大会，東京，2007年11月1日～3日．
髙橋昌男，成田比呂晃，劉玥伶，岩佐仁雄，小林光，HCN水溶液を用いるbare Si表面上の吸着Cu除去とそのメカニズム，第27回表面科学講演大会，東京，2007年11月1日～3日．
宍戸豪，髙橋昌男，劉玥伶，岩佐仁雄，小林光，微少領域光電圧測定による太陽電池の光電変換特性の評価，第68回応用物理学会学術講演会，札幌，2007年9月4日～8日．
長山，今村健太郎，松本健俊，髙橋昌男，小林光，硝酸酸化法を用いて120°Cで形成した～10nm-SiO2/Si構造の物性と電気特性，第68回応用物理学会学術講演会，札幌，2007年9月4日～8日．
浦郷将英，今村健太郎，松本健俊，髙橋昌男，小林光，硝酸酸化法による多結晶シリコンの120°Cでの酸化とリッジ低減，第68回応用物理学会学術講演会，札幌，2007年9月4日～8日．
髙橋昌男，劉玥伶，宍戸豪，小林光，欠陥消滅型半導体洗浄液によるベアシリコン表面制御，第68回応用物理学会学術講演会，札幌，2007年9月4日～8日．
髙橋昌男，マダニモハマド，任星淳，アスハ，小林光，硝酸酸化法で形成したSiO2/SiC構造の表面・界面：水素処理の効果，日本物理学会2007年春季大会，鹿児島，2007年3月18日-21日．
今村健太郎，深山権一，髙橋昌男，小林光，低速電子衝撃法で形成した1nm-SiN層によるHfO2/Si界面反応の完全防止，第54回応用物理学関係連合講演会，相模原，2007年3月27-30日．
高橋昌男，成田比呂晃，劉 玥伶，小林 光，欠陥消滅型半導体洗浄液によるbare Si上のCu汚染の除去(2)表面形態制御，第54回応用物理学関係連合講演会，相模原，2007年3月27-30日．
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ポスター
発表 |
Y. Ishikawa, Asuha, S. Imai, Masao
Takahashi, Hikaru Kobayashi, Low Temperature Oxidation of 4H-SiC by Use of
Nitric Acid Oxidation Method, 5th 21st Century COE
“Towards Creating New Industries Based on Inter-Nanoscience” International
Symposium, Awaji, Japan, Dec. 8-9, 2007.
M. Madani(大阪大学), Y.-L. Liu, S.-S. Im, M. Takahashi, H. Kobayash, Improved Cleaning
Method of SiC Using HCN Aqueous Solutions and 100 % H2 Treatment, 5th
21st Century COE “Towards Creating New Industries Based on
Inter-Nanoscience” International Symposium, Awaji, Japan, Dec. 8-9, 2007.
M. Takahashi(大阪大学), S.-S. Im, Asuha, H. Kobayashi, Low temperature fabrication of
3C-SiC/SiO2 MOS structures by nitric acid oxidation, 5th 21st Century COE “Towards Creating
New Industries Based on Inter-Nanoscience” International Symposium, Awaji,
Japan, Dec. 8-9, 2007.
H. Kobayashi, Improvement of Si solar cell
characteristics by new defect passivation method, 5th 21st
Century COE “Towards Creating New Industries Based on Inter-Nanoscience”
International Symposium, Awaji, Japan, Dec. 8-9, 2007.
H. Kobayashi, S.-S. Im, M. Takahashi, and
H. Nagasawa, Nitric acid oxidation of SiC for fabrication of 3C-SiC based MOS
devices, International conference on Silicon Carbide and Related Materials
2007, Otsu, Japan, Oct. 14-19, 2007.
J. Rusnák, E. Pinčík, M. Takahashi, R.
Brunner, and M. Ružinský, New advanced charge version of deep level transient
spectroscopy equipment and its application at investigation of passivated very
thin oxide/silicon structures, 5th International Workshop on Semiconductor
Surface Passivation, Zakopane, Poland, Sep. 16-19, 2007.
R. Brunner, E. Pinčík, H. Kobayashi, M.
Takahashi, M. Kučera, and J. Rusnák, Photoluminescence of passivated a-Si:H,
5th International Workshop on Semiconductor Surface Passivation, Zakopane,
Poland, Sep. 16-19, 2007.
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| 新聞発表 |
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・2006年
| 論文 |
M. Takahashi, Y.-L. Liu, N. Fujiwara, H.
Iwasa, and H. Kobayashi, Silicon cleaning and defect passivation effects of hydrogen
cyanide aqueous solutions, Solid State Commun. 137 (2006) 263-267.
S. Imai, M. Fujimoto, Asuha, M. Takahashi,
and H. Kobayashi, Formation of atomically smooth SiO2/SiC interfaces
at ~120 °C by use of nitric acid oxidation method, Surf. Sci. 600 (2006) 547-550.
E. Pincik, H. Kobayashi, J. Rusnak, M.
Takahashi, R. Brunner, M. Jergel, Passivation of Si and a-Si:H surfaces by thin
oxide and oxy-nitride layers, Appl. Surf. Sci. 252 (2006) 7713-7721.
H. Kobayashi, T. Sakurai, Y. Yamashita, T.
Kubota, O. Maida, and M. Takahashi, A method of observation of low density
interface states by means of X-ray photoelectron spectroscopy under bias and
passivation by cyanide ions, Appl. Surf. Sci. 252 (2006) 7700-7712.
H. Kobayashi, Y.-L. Liu, A. Asano, Y.
Yamashita, J. Ivanco, and M. Takahashi, Methods of observation and elimination
of semiconductor defect states, Solar Energy, 80 (2006) 645-652.
H. Kobayashi, Asuha, S.-S. Im, S. Imai, and
M. Takahashi, Nitric acid oxidation of Si method for the formation of high quality
Si/SiO2 structure at ~120 °C, AJAM, (2006) 104-108.
Y.-L. Liu, N. Fujiwara, H. Iwasa, M.
Takahashi, S. Imai, and H. Kobayashi, Reaction of cyanide ions with copper on
Si surfaces and its use for Si cleaning, Surf. Sci. 600 (2006) 1165-1169.
N. Fujiwara, Y.-L. Liu, M. Takahashi, and
H. Kobayashi, Mechanism of copper removal from SiO2 surfaces by
hydrogen cyanide aqueous solutions, J. Electrochem. Soc. 153 (2006) G394-G398.
Asuha, S.-S. Im, M. Tanaka, S. Imai, M.
Takahashi, and H. Kobayashi, Formation of 10~30 nm SiO2/Si structure
with a uniform thickness at ~120 °C by nitric acid oxidation method, Surf. Sci.
600 (2006) 2523-2527.
Y.-L. Liu, M. Takahashi, and H. Kobayashi,
Mechanism of Ni removal from Si materials by use of hydrogen cyanide aqueous
solutions, J. Electrochem. Soc. 153
(2006) G394-G398.
S.-S. Im, M. Takahashi, and H. Kobayashi,
Room temperature formation of silicon oxynitride/silicon structure by use of
electrochemical method, J. Appl. Phys. 100
(2006) 044101-1-5.
Osamu Maida, Ken-ichi Fukayama, Masao
Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun Choi,
Interface states for HfO2/Si structure observed by XPS measurements
under bias, Appl. Phys. Lett. 89 (2006) 122112-1-3.
K. Imamura, O. Maida, K. Hattori, M.
Takahashi, and H. Kobayashi, Low temperature formation of SiO2/Si
structure by nitric acid vapor, J. Appl. Phys. 100 (2006) 114910-1-4.
|
| 著書・総説 |
菊池英一, 堂免一成, 小林光他, 実験化学講座, 触媒化学, 電気化学, 丸善株式会社 (2006年).
|
| 招待講演 |
M. Takahashi, Semiconductor surface
cleaning and passivation by the chemical treatment in solutions of hydrogen
cyanide, 5th Solid State Surfaces and Interfaces, Slovak Republic,
Nov. 19-24, 2006.
H. Kobayashi, Two-step nitric acid
oxidation of Si and SiC (NAOS) method for the formation of SiO2/Si
and SiO2/SiC structures at 120 °C, 5th Solid State
Surfaces and Interfaces, Slovak Republic, Nov. 19-24, 2006.
M. Takahashi, Semiconductor surface
cleaning and passivation by the chemical treatment in solutions of hydrogen
cyanide, 5th Solid State Surfaces and Interfaces, Slovak Republic,
Nov. 19-24, 2006.
H. Kobayashi, Two-step nitric acid
oxidation of Si and SiC (NAOS) method for the formation of SiO2/Si
and SiO2/SiC structures at 120 °C, 5th Solid State
Surfaces and Interfaces, Slovak Republic, Nov. 19-24, 2006.
小林光、第10回関西半導体解析技術研究会、新規半導体化学プロセスの開発と半導体デバイスの高性能化、門真、2006年5月19日.
M. Takahashi, Si defect passivation and
cleaning method by use of new chemistry, International Congress on Materials
Science and Engineering 2006 (CISGM4), Algeria, May 2-4, 2006.
H. Kobayashi, Nitric Acid oxidation of Si
method for low temperature fabrication of Si/SiO2 structure and its
application to semiconductor, International Congress on Materials Science and
Engineering 2006 (CISGM4), Algeria, May 2-4, 2006.
H. Kobayashi,
Asuha, M. Tanakal, S. Lmai, and M. Takahashi, Low temperature formation of SiO2/Si
structure by useof nitric acid oxidation method and its
application to thin film, 7th lnternationaI Symposium on Eco-Materials
Processing and Design, Chengdu, China, Jan. 8-11, 2006.
|
| 口頭発表 |
髙橋昌男，任星淳，アスハ，小林光，120℃の硝酸水溶液中でのSiC上への酸化膜形成，粉体粉末冶金協会平成18年度秋季大会，吹田，2006年12月5日-7日．
劉玥伶，成田比呂晃，髙橋昌男，小林光，シアン化物含有溶液によるSiO2薄膜上の極微量吸着Niの除去，第25回吸着分子の分光学的研究セミナー／第7回表面エレクトロニクス研究会，守山，2006年12月8日．
任星淳，髙橋昌男，小林光，水素処理によるSiC表面の平滑化とSiO2/SiC構造の特性向上，第47回真空に関する連合講演会，吹田，2006年11月7日-9日．
成田比呂晃，劉玥伶，髙橋昌男，小林光，欠陥消滅型半導体洗浄液によるbare Si上のCu汚染の除去，第67回応用物理学会学術講演会，草津，2006年8月29日-9月1日．
髙橋昌男，深山権一，毎田修，小林光，電圧印加時のXPS測定によるHfO2/SiON/Si構造の界面準位，第67回応用物理学会学術講演会，草津，2006年8月29日-9月1日．
M. Madani, Y.-L. Liu, S.-S. I, M. Takahashi, H. Kobayashi，Control of SiC surfaces by the annealing in a hydrogen gas and the immersion in solutions of HCN， 26回表面科学講演大会，吹田，2006年11月6日-9日．
髙橋昌男，アスハ，田中祐士，岩佐仁雄，小林光，硝酸酸化法による低温生成SiO2膜の微構造，日本物理学会第61回年次大会，27aYB-4，松山，2006年3月27日～30日．
|
ポスター
発表 |
髙橋昌男，任星淳，アスハ，小林光，120℃の硝酸水溶液中でのSiC上への酸化膜形成，粉体粉末冶金協会平成18年度秋季大会，吹田，2006年12月5日-7日．
劉玥伶，成田比呂晃，髙橋昌男，小林光，シアン化物含有溶液によるSiO2薄膜上の極微量吸着Niの除去，第25回吸着分子の分光学的研究セミナー／第7回表面エレクトロニクス研究会，守山，2006年12月8日．
任星淳，髙橋昌男，小林光，水素処理によるSiC表面の平滑化とSiO2/SiC構造の特性向上，第47回真空に関する連合講演会，吹田，2006年11月7日-9日．
成田比呂晃，劉玥伶，髙橋昌男，小林光，欠陥消滅型半導体洗浄液によるbare Si上のCu汚染の除去，第67回応用物理学会学術講演会，草津，2006年8月29日-9月1日．
髙橋昌男，深山権一，毎田修，小林光，電圧印加時のXPS測定によるHfO2/SiON/Si構造の界面準位，第67回応用物理学会学術講演会，草津，2006年8月29日-9月1日．
M. Madani, Y.-L. Liu, S.-S. I, M. Takahashi, H. Kobayashi，Control of SiC
surfaces by the annealing in a hydrogen gas and the immersion in solutions
of HCN， 26回表面科学講演大会，吹田，2006年11月6日-9日．
髙橋昌男，アスハ，田中祐士，岩佐仁雄，小林光，硝酸酸化法による低温生成SiO2膜の微構造，日本物理学会第61回年次大会，27aYB-4，松山，2006年3月27日～30日．
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| 新聞発表 |
|
・2005年
| 論文 |
S. Imai,
M. Takahashi, K. Matsuba, Asuha, Y. Ishikawa, H. Kobayashi, Formation and
electrical characteristics of silicon dioxide layers by use of nitric acid oxidation
method, Acta. Phys. Slov. 55 (2005) 305-313.
J.
Ivanco, T. Kubota, H. Kobayashi, Deoxidation of gallium arsenide surface via
silicon overlayer: a study on the evolution of the interface state density, J.
Appl. Phys. 97 (2005) 073712.
M. Kral,
A. Bucek, H. Gleskova, M. Cernak, H. Kobayashi, J. Rusnak, M. Zahoran, R.
Brunner, and E. Pincik, Electronic properties of very thin native SiO2/a-Si-H
interfaces and their comparison with those prepared by both dielectric barrier
discharge oxidation at atmospheric pressure and by chemical oxidation, Act.
Phys. Slov. 55 (2005) 373-378.
|
| 著書・総説 |
|
| 招待講演 |
H.
Kobayashi, H. Narita, Y.-L. Liu, and M. Takahashi, Improvement of Si solar cell
characteristics by use of new semiconductor defect passivation method, 2005‘
Qingdao International Formum for New Energy Materials an Technology
Application, pp.24-33, Qingdao, China, Nov.24-27, 2005 .
|
| 口頭発表 |
M.
Takahashi, Y.-L. Liu, H. Narita, and H. Kobayashi, A new semiconductor cleaning
method by the use of defect passivation etchless cleaning solutions, 208th
Meeting of The Electrochemical Society, Los Angeles, California, U.S.A., Oct.
16-21, 2005. |
ポスター
発表 |
S.-S. Im,
M. Takahashi, and H. Kobayashi, Room temperature formation of silicon
oxynitride/silicon structure by electrochemical method, The First International
Workshop for R&D Clustering among China, Japan, Korea in Eco-materials
Processing, Seoul, Korea, Nov. 10-13, 2005. |
| 新聞発表 |
|
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