Paper 本文へジャンプ

2017
E. Pincik, R. Brunner, H. Kobayashi, M. Mikula, About complex refractive index of black Si, J. Elect. Eng., 68 (2017) 81-83.
[DOI: 10.1515/jee-2017-0063] (Open Access)

S. Jurecka, K. Imamura, T. Matsumoto, H. Kobayashi, Properties of nanocrystalline Si layers embedded in structure of solar cell, J. Elect. Eng., 68 (2017) 48-52.
[DOI: 10.1515/jee-2017-0055] (Open Access)

P. Bury, S. Hardon, H. Kobayashi, K. Imamura, Investigation of deep defects in nanocrystalline-Si/Si interfaces using acoustic spectroscopy, J. Elect. Eng. 68 (2017) 43-47.
[DOI: 10.1515/jee-2017-0054] (Open Access)

K. Imamura, Y. Onitsuka, Y. Sakae, H. Kobayashi, High conversion efficiency of crystalline Si solar cells using black−Si fabricated by SSCT method, J. Elect. Eng. 68 (2017) 37-42.
[DOI: 10.1515/jee-2017-0053] (Open Access)

Y. Kobayashi, K. Imamura, T. Matsumoto, H. Kobayashi, Fabrication of Si nanopowder and application to hydrogen generation and photoluminescent material, J. Elect. Eng. 68 (2017) 17-23.
[DOI: 10.1515/jee-2017-0050] (Open Access)

S. Jurecka, K. Imamura, T. Matsumoto, H. Kobayashi, Analysis of photoluminescence in the ncSi-DMA system, Commun. 19 (2017) 21-25. (Open Access)

K. Imamura, Y. Kobayashi, S. Matsuda, T. Akai, H. Kobayashi, Reaction of Si nanopowder with water investigated by FT-IR and XPS, AIP Adv. 7 (2017) 085310-1-10.
[DOI: 10.1063/1.4989794] (Open Access)

T. Matsumoto, H.-S. Joe, H. Kobayashi, Mechanism of low temperature oxidation of 4H-SiC by nitric acid vapor oxidation method at 600°C, ECS J. Solid State Sci. and Technol., 6 (2017) P578-P581. (Open Access)
[DOI: 10.1149/2.0071709jss]

M. Maeda, T. Matsumoto, H. Kobayashi, Photoluminescence from vibrational excited-states for organic molecules adsorbed on Si nanoparticles, Phys. Chem. Chem. Phys., 19 (2017) 21856-21861. (Open Access a year after publication)
[DOI: 10.1039/C7CP01836C]

T. Akai, K. Imamura, H. Kobayashi, Fabrication mechanism of atomically flat n-type 4H-SiC (000-1) surfaces by electrochemical method, ECS J. Solid State Sci. and Technol. 6 (2017) 265-269.
[DOI: 10.1149/2.0151705jss] (Open Access)

D. Irishika, Y. Onitsuka, K. Imamura, H. Kobayashi, “Improvement of conversion efficiency of silicon solar cells by submicron-textured rear reflector obtained by metal-assisted chemical etching”, Solar RRL, 1 (2017) 1700061-1-4.
[DOI: 10.1002/solr.201700061/epdf]

T. Matsumoto, K. Kimura, H. Nishihara, T. Kasukabe, T. Kyotani, H. Kobayashi, “Fabrication of Si nanopowder from Si swarf and application to high-capacity and low cost Li-ion batteries”, J. Alloys Compd. 720 (2017) 529-540.
[DOI: 10.1016/j.jallcom.2017.05.228]

Y. Kobayashi, S. Matsuda, K. Imamura, H. Kobayashi, “Hydrogen generation by reaction of Si nanopowder with neutral water”, J. Nanopart. Res. 19 (2017) 176-1-9.
[DOI: 10.1007/s11051-017-3873-z] (Open Access)

K. Imamura, D. Irishika, H. Kobayashi, “Surface nanocrystalline Si structure for highly efficient crystalline Si solar cells”, Prog. Photovolt. 25 (2018) 358-366.
[DOI: 10.1002/pip.2867]

K. Kimura, T. Matsumoto, H. Nishihara, T. Kasukabe, T. Kyotani and H. Kobayashi, “Improvement of cyclability of Li-ion batteries using c-coated Si nanopowder electrode fabricated from Si swarf with limitation of delithiation capacity”, J. Electrochem. Soc. 164 (2017) A995-A1001.
[DOI: 10.1149/2.0361706jes] (Open Access)

T. Kasukabe, H. Nishihara, K. Kimura, T. Matsumoto, H. Kobayashi, T. Kyotani, “Beads-milling of waste Si sawdust into high-performance nanoflakes for lithium-ion batteries”, Sci. Rep. 7 (2017) 42734-1-10.
[DOI: 10.1038/srep42734] (Open Access)

M. Kopani, M. Mikula, E. Pincik, H. Kobayashi, M. Takahashi, “Effect of HCN passivation on silicon oxide thin layer”, J. Chinese Adv. Mater. Soc. 5 (2017) 57-64.
[DOI: 10.1080/22243682.2016.1256792]

K. Imamura, D. Irishika, H. Kobayashi, “Mechanism of ultra-low reflectivity for nanocrystalline Si/crystalline Si structure formed by surface structure chemical transfer method”, J. Appl. Phys. 121 (2017) 013107.
[doi: 10.1063/1.4973531]

K. Imamura, T. Nonaka, Y. Onitsuka, D. Irishika, H. Kobayashi, “Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture”, Appl. Surf. Sci. 395 (2017) 50-55.
[DOI: 10.1016/j.apsusc.2016.04.132]

T. Matsumoto, H. Nakajima, D. Irishika, T. Nonaka, K. Imamura, H. Kobayashi, “Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells”, Appl. Surf. Sci. 395 (2017) 56-60.
[doi: 10.1016/j.apsusc.2016.06.001]

S. Jurecka, T. Matsumoto, K. Imamura, H. Kobayashi, “Multifractal analysis and optical properties of nanostructured silicon layers”, Appl. Surf. Sci. 395 (2017) 150-156.
[DOI: 10.1016/j.apsusc.2016.04.059]

E. Pincik, R. Brunner, H. Kobayashi, M. Mikula, M. Kučera, P. Švec Jr., J. Greguš, P. Vojtek, Z. Zábudlá, K. Imamura, M. Zahoran, “About the optical properties of oxidized black silicon structures”, Appl. Surf. Sci. 395 (2017) 185-194.
[DOI: 10.1016/j.apsusc.2016.05.035]



2016
A. Ishibashi, H. Kobayashi, T. Taguchi, K. Kondo, T. Kasai, “Optical Simulation for Multi-Striped Orthogonal Photon-Photocarrier-Propagation Solar Cell ((MOPSC)-S-3) with Redirection Waveguide”, 3D Res., 7 (2016) 33-1-5.
[DOI: 10.1007/s13319-016-0109-4]

M.-H. Kim, M.-J. Choi, K. Kimura, H. Kobayashi, D.K. Choi, “Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment”, Solid-State Electronics, 126 (2016) 87-91.
[DOI: 10.1016/j.sse.2016.09.010]

Y. Usami, K. Imamura, T. Akai, D.-C. Che, H. Ohoyama, H. Kobayashi, T. Matsumoto, “Intra-grain conduction of self-doped polyaniline”, J. Appl. Phys. 120 (2016) 084308-1-7.
[DOI: 10.1063/1.4961610]

E. Pincik, R. Brunner, H. Kobayashi, M. Mikula, P. Vojtek, J. Gregus, Z. Zabudla, K. Imamura, P. Svec, Jr., “The photoluminescence of multicolor silicon”, J. Chin. Adv. Mater. Soc., 4 (2016) 158-171.
[DOI: 10.1080/22243682.2016.1151374]

K. Imamura, K. Kimura, S. Fujie, H. Kobayashi, “Hydrogen generation from water using Si nanopowder fabricated from Si swarf”, J. Nanoparticle Research, 18 (2016) 116-1-7.
[DOI: 10.1007/s11051-016-3418-x]

T. Matsumoto, M. Maeda, H. Kobayashi, “Photoluminescence enhancement of adsorbed species on Si”, Nanoscale Res. Lett., 11 (2016) 7-1-6.
[DOI: 10.1186/s11671-015-1220-9] (Open Access)



2015
K. Imamura, T. Nonaka, D. Irishika, H. Kobayashi, “Ultralow reflectivity and light trapping for crysltalline Si solar cells by use of surface structure chemical transfer method on pyramid textured surfaces”, ECS Solid State Lett. 4 (2015) Q63-Q65.
[DOI: 10.1149/2.0091512ssl]

K. Imamura, T. Akai, H. Kobayashi, “High aspect ratio Si micro-holes formed by wet etching using Pt needles”,Mater. Res. Express 2 (2015) 075901-1-6.
[DOI: 10.1088/2053-1591/2/7/075901]

D. Irishika, K. Imamura, H. Kobayashi, “Ultralow reflectivity surfaces by formation of nanocrystalline Si layer for crystalline Si solar cells”, Sol. Energ. Mat. Sol. C. 141 (2015) 1-6.
[DOI: 10.1016/j.solmat.2015.05.006]

T. Matsumoto, H. Tsuji, S. Terakawa, H. Kobayashi, “Ultra-low power poly-Si TFTs with 10 nm stacked gate oxide fabricated by nitric acid oxidation of silicon (NAOS) method”, ECS J. Solid State Sci. Technol., 4 (2015) N36-N40.
[DOI: 10.1149/2.0151505jss] (Open Access)

T. Matsumoto, R. Hirose, F. Shibata, D. Ishibashi, S. Ogawara, H. Kobayashi, Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect, Sol. Energ. Mat. Sol. C. 134 (2015) 298-304.
[DOI: 10.1016/j.solmat.2014.11.040]

E. Pincik, R. Brunner, H. Kobayashi, M. Takahashi, M. Mikula, Interaction of KCN solutions with Si-based thin films, J. Chin. Adv. Mater. Soc., 3 (2015) 119-127.
[DOI: 10.1080/22243682.2015.1011693]


2014
F. Shibata, D. Ishibashi, S. Ogawara, T. Matsumoto, K. Chang-Ho, H. Kobayashi, Improvement of minority carrier lifetime and Si solar cell characteristics by nitric acid oxidation method, ECS J. Solid State Sci. Technol. 3 (2014) Q137-Q141.
[DOI: 10.1149/2.024406jss]

M. Maeda, K. Imamura, T. Matsumoto, H. Kobayashi, Fabrication of Si nanoparticles from Si swarf and application to solar cells, Appl. Surf. Sci. 312 (2014) 39-42.
[DOI: 10.1016/j.apsusc.2014.02.131]

D. Yano, M. Murayama, H. Kobayashi, K. Yamanaka, Prevention of Unexpected Oxidation of Metal Layer by Removing Hydrogen Peroxide from Ultrapure Water and Diluted Hydrofluoric Acid, Solid State Phenom. 219 (2014) 221-224.
[DOI: 10.4028/www.scientific.net/SSP.219.221]


S. Jurecka, H. Angermann,
H. Kobayashi, M. Takahashi, E. Pinčík, Multifractal analysis of textured silicon surfaces, Appl. Surf. Sci.
301 (2014) 46-50.
[DOI: 10.1016/j.apsusc.2014.02.102]


E. Pinčík, H. Kobayashi, T. Matsumoto, M. Takahashi, M. Milan, R. Brunner, Properties of HfO2/ultrathin SiO2/Si structures and their comparison with
Si MOS structures passivated in KCN solution, Appl. Surf. Sci. 301 (2014) 34-39.
[DOI: 10.1016/j.apsusc.2014.01.113]


M. Kopani, M. Mikula, E. Pinčík, H. Kobayashi, M. Takahashi, FT IR spectroscopy of nitric acid oxidation of silicon with hafnium oxide very thin layer, Appl. Surf. Sci. 301 (2014) 24-27.
[DOI: 10.1016/j.apsusc.2014.01.124]

T. Matsumoto, M. Maeda, J. Furukawa, W-.B. Kim, H. Kobayashi, Si nanoparticles fabricated from Si swarf by photochemical method, J. Nanopart. Res., 16 (2014) 2240-1-7.
[DOI: 10.1007/s11051-013-2240-y]


K. Kimura, M. Takahashi, H. Kobayashi, Metal removal and defect passivation performed on Si wafers for solar cell use by HCN treatments, ECS J. Solid State Sci. Technol. 3 (2014) Q11-Q15.
[DOI: 10.1149/2.007402jss]


A.M. Ali, H. Kobayashi, Hydrogen effect on nanostructural features of nanocrystalline silicon thin films deposited at 200˚C by PECVD, J. Non-cryst. Solids. 385 (2014) 17-13.
[DOI: 10.1016/j.jnoncrysol.2013.10.019]


2013
E. Pinčík, H. Kobayashi, M. Takahashi, R. Brunner, S. Jurecka, Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell, J. Chinese Adv. Mater. Soc. 1 (2013) 151-165.
[DOI: 10.1080/22243682.2013.808063]

K. Imamura, F.C. Franco, Jr., T. Matsumoto, H. Kobayashi, Ultra-low reflectivity polycrystalline Si surfaces formed by surface structure chemical transfer method, Appl. Phys. Lett. 103 (2013) 013110-1-4.
[DOI: 10.1063/1.4813089]

T. Matsumoto, W. Kai, T. Fukushima, M. Takahashi, A. Ishibashi, H. Kobayashi, Improvement of minority carrier lifetime by HCN treatments, ECS J. Solid State Sci. Technol. 2 (2013) Q127-Q130.
[DOI: 10.1149/2.026307jss]


M. Takahashi, T. Fukushima, Y. Seino, W.-B. Kim, K. Imamura, H. Kobayashi, Surface structure chemical transfer method for formation of ultralow reflectivity Si surfaces, J. Electrochem. Soc., 160 (2013) H443-H445.
[DOI: 10.1149/2.044308jes]

M. Kopani, M. Mikula, M. Takahashi, J. Rusnák, E. Pinčík, FTIR spectroscopy of silicon oxide layers prepared with perchloric acid, Appl. Surf. Sci., 269 (2013) 106-109.
[DOI: 10.1016/j.apsusc.2012.09.081]

E. Pinčík, H. Kobayashi, J. Rusnák, M. Takahashi, R. Brunner, About electrical properties of passivated SiO2/Si structures prepared electro-chemically in HClO4 solutions, Appl. Surf. Sci. 269 (2013) 148.
[DOI: 10.1016/j.apsusc.2012.10.053]

P. Bury, T. Matsumoto, I. Bellan, M. Janek, H. Kobayashi, Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO
2/HfO2 structures, Appl. Surf. Sci. 269 (2013) 50.
[DOI: 10.1016/j.apsusc.2012.10.103]



2012
K. Imamura, T. Matsumoto, H. Kobayashi, Optimum condition to fabricate 5–10 nm SiO2/Si structure using advanced nitric acid oxidation of Si (NAOS) method with Si source, J. Appl. Phys. 112 (2012) 124322-1-7.
[DOI: 10.1063/1.4771684]

F. F. Jr. Corpuz, T. Matsumoto, W.-B. Kim, H. Kobayashi, Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry- and wet-air, ECS. Solid-State Lett., 1 (2012) 89-91.
[DOI: 10.1149/2.006206ssl]

E. Pinčík, H. Kobayashi, J. Rusnák, M. Takahashi, M. Mikula, W-.B. Kim, M. Kučera, R. Brunner, S. Jurečka, Passivation of Si-based structures in HCN and KCN solutions, Appl. Surf. Sci. 258 (2012) 8397-8405.
[DOI: 10.1016/j.apsusc.2012.02.121]

S. Jurecka, H. Kobayashi, M. Takahashi, T. Matsumoto, E. Pincik, Properties of charge states in MOS structure with ultrathin oxide layer, Appl. Surf. Sci., 258 (2012) 8409-8414.
[DOI: 10.1016/j.apsusc.2012.05.001]

S. Jurecka, H. Kobayashi, W.-B. Kim, M. Takahashi, E. Pincik, Study of density of interface states in MOS structure with ultrathin NAOS oxide, Cent. Eur. J. Phys., 10 (2012) 210.
[DOI: 10.2478/s11534-011-0092-6]


Y. Kubota, T. Matsumoto, H. Tsuji, N. Suzuki, S. Imai, H. Kobayashi, 1.5 V-Operation Ultr-Low Power Circuit of Poly-Si TFTs Fabricated Using Nitric Acid Oxidation of Silicon (NAOS) Method, IEEE Trans. Electron Devices, 59 (2012) 385-392.
[DOI: 10.1109/TED.2011.2175395]



2011
P. Hockicko, P. Bury, P. Sidor, H. Kobayashi, M. Takahashi, T. Yanase, Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers, Cent. Eur. J. Phys. 9 (2011) 242-249.
[DOI: 10.2478/s11534-010-0038-4]

T. Matsumoto, Y. Kubota, S. Imai, H. Kobayashi, Nitric Acid Oxidation to Form a Gate Oxide Layer in Sub-Micrometer TFT, Electrochem. Soc. Trans. 35 (2011) 217-227.
[DOI: 10.1149/1.3572285]

M. Takahashi, Y. Higashi, S. Ozaki, H. Kobayashi, Chemical states of copper contaminants on SiO2 surfaces and their removal by ppm-order HCN aqueous solutions, J. Electrochem. Soc., 158 (2011) H825-829.
[DOI: 10.1149/1.3599832]


T. Fukushima, A. Ohnaka, M. Takahashi, H. Kobayashi, Fabrication of low reflectivity poly-crystalline Si surfaces by structure transfer method, Electrochem. Solid-State Lett., 14 (2011) B13-15.
[DOI: 10.1149/1.3515990]


Y. Kubota, T. Matsumoto, S.Imai, M. Yamada, H. Tsuji, K. Taniguchi, S. Terakawa, H. Kobayashi, Sub-micrometer ultralow power TFT with 1.8 nm NAOS SiO2/20 nm CVD SiO2 gate stack structure, IEEE Trans. Electron Dev., 58 (2011) 1134-1140.
[DOI: 10.1109/TED.2011.2108657]



2010
T. Matsumoto, Y. Kubota, M. Yamada, H. Tsuji, T. Shimatani, Y. Hirayama, S. Terakawa, S. Imai, and H. Kobayashi, Ultra-low power TFT with gate oxide fabricated by nitric acid oxidation method, IEEE Electron Device Lett. 31 (2010) 821-823.
[DOI: 10.1109/LED.2010.2050856]


W.-B. Kim, T. Matsumoto, and H. Kobayashi, Ultrathin SiO2 layer with a low leakage current density formed with ~100 % nitric acid vapor, Nanotechnology 21 (2010) 115202-1-8.
[DOI: 10.1088/0957-4484/21/11/115202]


T. Iwata, M. Matsumoto, S. Terakawa, and H. Kobayashi, Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature, Cent. Eur. J. Phys. 8 (2010) 1015-1020.
[DOI: 10.2478/s11534-010-0014-z]


H. Kobayashi, K. Imamura, W.-B. Kim, S.-S. Im, and Asuha, Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures, Appl. Surf. Sci. 256 (2010) 5744-5756.
[DOI: 10.1016/j.apsusc.2010.03.092]


E. Pincik, H. Kobayashi, J. Rusnak, W. B. Kim, R. Brunner, L. Malinovsky, T. Matsumoto, K. Imamura, M. Jergel, M. Takahashi, Y. Higashi, M. Kucera, and M. Mikula, On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process, Appl. Surf. Sci. 256 (2010) 5757-5764.
[DOI: 10.1016/j.apsusc.2010.03.096]


R. Brunner, E. Pincik, H. Kobayashi, M. Kucera, M. Takahashi, and J. Rusnak, On photoluminescence properties of a-Si:H-based structures, Appl. Surf. Sci. 256 (2010) 5596-5601.
[DOI: 10.1016/j.apsusc.2010.03.036]


P. Hockicko, P. Bury, P. Sidor, H. Kobayashi, M. Takahashi, and T. Yanase, Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2, Cent. Eur. J. Phys. 8 (2010) 242-249
[DOI: 10.2478/s11534-010-0038-4]


S. Jurecka, H. Kobayashi, M. Takahashi, T. Masumoto, M. Jureckova, F. Chovanec, and E. Pincik, On the influence of the surface roughness onto the ultrathin SiO2/Si structure properties, Appl. Surf. Sci. 256 (2010) 5623-5628.
[DOI: 10.1016/j.apsusc.2010.03.030]


Y. Fukaya, T. Yanase, Y. Kubota, S. Imai, T. Matsumoto, and H. Kobayashi, Low temperature fabrication of 5~10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method, Appl. Surf. Sci. 256 (2010) 5610-5613.
[DOI: 10.1016/j.apsusc.2010.03.032]


T. Yanase, M. Matsumoto, and H. Kobayashi, SiO2/Si structure having low leakage current fabricated by nitric acid oxidation method with Si source, Electrochem. Solid-State Lett. 13 (2010) H253-H256.
[DOI: 10.1149/1.3424885]


W.-B. Kim, M. Nishiyama, and H. Kobayashi, Removal of charging on SiO2/Si structure during photoelectron spectroscopy measurements by metal overlayer, J. Electron Spectroscopy Related Phenom. 176 (2010) 8-12.
[DOI: 10.1016/j.elspec.2009.10.003]


K. Imamura, M. Takahashi, Asuha, Y. Hirayama, S. Imai, and H. Kobayashi, Nitric acid oxidation of Si method at 120 ºC: HNO3 concentration dependence, J. Appl. Phys. 107 (2010) 054503-1-5.
[DOI: 10.1063/1.3296395]


H. Seo, Y.-B. Kim, G. Lucovsky, I.-D. Kim, K.-B. Chung, H. Kobayashi, D.-K. Choi, Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state, J. Appl. Phys. 107 (2010) 024109/1-7.
[DOI: 10.1063/1.3291124]



2009
R. Brunner, H. Kobayashi, M. Kucera, M. Takahashi, J. Rusnak, and E. Pincik, Photoluminescence of passivated a-Si:H, Mater. Sci. Forum 609 (2009) 281-285.
[DOI: 10.4028/www.scientific.net/MSF.609.281]


W.-B. Kim, T. Matsumoto, and H. Kobayashi, Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid, J. Appl. Phys. 105 (2009) 103709-1-6.
[DOI: 10.1063/1.3130596]


S. Jurecka, H. Kobayashi, M. Takahashi, R. Brunner, M. Madani, and E. Pincik, On topographic properties of semiconductor surfaces and thin film systems, Mater. Sci. Forum 609 (2009) 275-279.
[DOI: 10.4028/www.scientific.net/MSF.609.275].


J. Rusnak, M. Ruzinsky, K. Imamura, T. Matsumoto, M. Stefecka, M. Takahashi, H. Kobayashi, and E. Pincik, Investigation of deep interface traps in very-thin oxide/Si structures prepared at low temperatures using chemical solutions, Mater. Sci. Forum 609 (2009) 123-127.
[DOI: 10.4028/www.scientific.net/MSF.609.123]


E. Pincik, H. Kobayashi, R. Brunner, M. Takahashi, J. Rusnak, and M. Jergel, On similar electrical, optical and structural properties of MOS structures prepared on a-Si:H/c-Si, porous silicon/c-Si, and c-Si, Mater. Sci. Forum 609 (2009) 11-25.
[DOI: 10.4028/www.scientific.net/MSF.609.11]


S. Jurecka, M. Jureckova, F. Chovanec, H. Kobayashi, M..Takahashi, M. Mikula, and E. Pincik, On the tpographic and optical properties of
SiC/SiO2 surface, Cent. Eur. J. Phys. 7 (2009) 321-326.
[DOI: 10.2478/s11534-009-0021-0] (Open Access)


P. Bury, H. Kobayashi, M. Takahashi, K. Imamura, P. Sidor, and F. Cermobila, Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation, Cent. Eur. J. Phys. 7 (2009) 237-241.
[DOI: 10.2478/s11534-009-0029-5] (Open Access)

M. Takahashi, T. Shishido, H. Iwasa, and H. Kobayashi, Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions, Cent. Eur. J. Phys. 7 (2009) 227-231.
[DOI: 10.2478/s11534-009-0025-9]


K. Imamura, M. Takahashi, S. Imai, and H. Kobayashi, Band alignment of SiO2/Si structure formed with nitric acid vapor below 500ºC, Surf. Sci. 603 (2009) 968-972.
[DOI: 10.1016/j.susc.2009.01.026]