The Institute of Scientific and Industrial Research, Osaka University

ISIR OSAKA UNIVERSITY

Division of Information and Quantum Sciences

Department of Quantum System Electronics

Staff

A.OIWA
  • Prof.
    A.OIWA
S.HASEGAWA
  • Assoc. Prof.
    S.HASEGAWA
H.KIYAMA
  • Assis. Prof.
    H.KIYAMA
T.FUJITA
  • Assis. Prof.
    T.FUJITA
Y.SAKAI
  • Specially Appointed Assis. Prof.
    Y.SAKAI

Content of research

This department studies novel optical, electronic, and spin devices that support the highly-sophisticated information society in the 21st century. Focusing on semiconductor devices, our research fields cover quantum information processing using the quantum mechanical nature of electron spins and photons, and the development of multifunctioned optical, electrical and spin materials and its application to spintronic devices. We study the growth and characterization of high quality materials and perform precise quantum transport measurements. Aim of our research is the realization of novel phenomena emerging in quantum nano-structures that can control the photon, electron and spin degrees of freedom.

Current Research Programs

  • 1. Nano-level characterization and spin-related quantum transport in semiconductor low dimensional systems
    2. Quantum interface between single photon and single spin and its application to quantum information processing
    3. Novel magnetic semiconductors and their semiconductor spintronic device application.
    4. Wide band-gap semiconductor based materials integration and their device applications.

Figure / Graph

単一光子から単一電子スピンへ変換する二重量子ドット素子と光子照射の概念図量子ドットに生成される単一光生成電子の電荷とスピンは近接する量子ドットを高感度電荷計として用い検出される。
  • Schematic image of conversion from single photons to single electron spins in a double quantum dot with photon irradiation. Charge and spin of the single photoelectron are sensitively detected by a nearby quantum dot as a charge detector.
新しい室温強磁性半導体GaCrNを創製した。キュリー温度は1 3 0 ℃ 以上であり、トンネル磁気抵抗効果も観測された。半導体スピントロニクス材料として有望である。
  • We have synthesized new ferromagnetic semiconductor GaCrN. Curie temperature is above 130℃. Tunnel magneto-resistance effect was also observed. GaCrN is promising for semiconductor spintronics.

VIDEO INTRODUCTION