2010 IEEE Nanotechnology Materials and Device Conference

@Monterey CA, USA, October 12 - 15, 2010

• "Improving Faint-Signal Sensitivity of Electrolyte-Gated Carbon Nanotube Field-Effect Transistors Using External Noise."
  Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto
• "Single-Electron Memory Based on Floating-Gated Carbon Nanotube Field-Effect Transistors."
  Takahiro Ohori, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto
• "Fabrication of High-Performance Voltage Inverters Based on Carbon Nanotube Field-Effect Transistors."
  Kenzo Maehashi, Takaomi Kishimoto, Yasuhide Ohno, Koichi Inoue, and Kazuhiko Matsumoto