研究業績

[2014] [2013] [2012] [2011] [2010] [2009] [2008] [2007] [2006] [2005] [2004] [2003] [2002] [2001] [2000] [1999] [1998] [1997] [1996] [1995] [1994] [1993]

2014

論文

Flux Induced Crystal Phase Transition in Vapor-Liquid-Solid Growth of Indium-Tin Oxide Nanowires
Gang Meng, Takeshi Yanagida, Hideto Yoshida, Kazuki Nagashima, Masaki Kanai, Fuwei Zhuge, Yong He, Annop Klamchuen, Sakon Rahong, Xiaodong Fang, Seiji Taked,a and Tomoji Kawai
Nanoscale (2014) Accepted Manuscript.

Elucidation of the origin of grown-in defects in carbon nanotubes
Hideto Yoshida and Seiji Takeda
Carbon 70 (2014) 266-272.

A Study on the Mechanism for H2 Dissociation on Au/TiO2 Catalysts
Keju Sun, Masanori Kohyama, Shingo Tanaka, and Seiji Takeda
J. Phys. Chem. C 118 (2014) 1611-1617.


2013

論文

Three-dimensional Evaluation of Gettering Ability of Σ3{111} Grain Boundaries in Silicon by Atom Probe Tomography Combined with Transmission Electron Microscopy
Yutaka Ohno, Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Ichiro Yonenaga, Naoki Ebisawa, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, and Seiji Takeda
Appl. Phys. Lett. 103 (2013) 102102-1--102102-4.

Stepwise displacement of catalytically active gold nanoparticles on cerium oxide
Yasufumi Kuwauchi, Seiji Takeda, Hideto Yoshida, Keju Sun, Masatake Haruta, and Hideo Kohno
Nano Lett. 13 (2013) 3073-3077.

Restructuring Transition Metal Oxide Nanorods for 100% Selectivity in Reduction of Nitric Oxide with Carbon Monoxide
Shiran Zhang, Junjun Shan, Yuan Zhu, Luan Nguyen, Weixin Huang, Hideto Yoshida, Seiji Takeda, and Franklin Feng Tao
Nano Lett. 13 (2013) 3310-3314.

Direct O2 Activation on Gold/Metal Oxide Catalysts through a Unique Double Linear O-Au-O Structure
Keju Sun, Masanori Kohyama, Shingo Tanaka, and Seiji Takeda
ChemCatChem 5 (2013) 2217-2222.

WGS Catalysis and In Situ Studies of CoO1-x, PtCon/Co3O4, and PtmCom'/CoO1-x Nanorod Catalysts
Shiran Zhang, Jun-jun Shan, Yuan Zhu, Anatoly I. Frenkel, Anitha Patlolla, Weixin Huang, Seog Joon Yoon, Lei Wang, Hideto Yoshida, Seiji Takeda, and Franklin Feng Tao
J. Am. Chem. Soc. 135 (2013) 8283-8293.

Impact of Preferential Indium Nucleation on Electrical Conductivity of Vapor-Liquid-Solid Grown Indium-Tin Oxide Nanowires
Gang Meng, Takeshi Yanagida, Kazuki Nagashima, Hideto Yoshida, Masaki Kanai, Annop Klamchuen, Fuwei Zhuge, Yong He, Sakon Rahong, Xiaodong Fang, Seiji Takeda, and Tomoji Kawai
J. Am. Chem. Soc. 135 (2013) 7033-7038.

Catalysis and In Situ Studies of Rh1/Co3O4 Nanorods in Reduction of NO with H2
Lei Wang, Shiran Zhang, Yuan Zhu, Anitha Patlolla, Junjun Shan, Hideto Yoshida, Seiji Takeda, Anatoly I. Frenkel, and Franklin (Feng) Tao
ACS Catal. 3 (2013) 1011-1019.

Atomic-resolution environmental TEM for quantitative in-situ microscopy in materials science
Seiji Takeda and Hideto Yoshida
Microscopy 62 (2013) 193-203.


著書

ナノワイヤ最新技術の基礎と応用展開
第Ⅰ編 成長 第2章 VLSシリコンナノワイヤー成長

竹田 精治
シーエムシー出版 (2013).


2012

論文

Fundamental Strategy for Creating VLS Grown TiO2 Single Crystalline Nanowires
Fuwei Zhuge, Takeshi Yanagida, Kazuki Nagashima, Hideto Yoshida, Masaki Kanai, Bo Xu, Annop Klamchuen, Gang Meng, Yong He, Sakon Rahong, Xiaomin Li, Masaru Suzuki, Shoichi Kai, Seiji Takeda, and Tomoji Kawai
J. Phys. Chem. C 116 (2012) 24367-24372.

Theoretical study of atomic oxygen on gold surface by Hückel theory and DFT calculations
Keju Sun, Masanori Kohyama, Shingo Tanaka, and Seiji Takeda
J. Phys. Chem. A 116 (2012) 9568-9573.

Intrinsic Catalytic Structure of Gold Nanoparticles Supported on TiO2
Yasufumi Kuwauchi, Hideto Yoshida, Tomoki Akita, Masatake Haruta, and Seiji Takeda
Angew. Chem. Int. Ed. 51 (2012) 7729-7733.

In situ structural analysis of crystalline Fe-Mo-C nanoparticle catalysts during the growth of carbon nanotubes
Hideto Yoshida, Hideo Kohno, and Seiji Takeda
Micron 43 (2012) 1176-1180.

Visualizing Gas Molecules Interacting with Supported Nanoparticulate Catalysts at Reaction Conditions
Hideto Yoshida, Yasufumi Kuwauchi, Joerg R. Jinschek, Keju Sun, Shingo Tanaka, Masanori Kohyama, Satoshi Shimada, Masatake Haruta, and Seiji Takeda
Science 335 (2012) 317-319.


著書

In-situ Electron Microscopy, Applications in Physics, Chemistry and Materials Science
Edited by Gerhard Dehm, James M. Howe, and Josef Zweck
Chapter 13: Cathodoluminescence in Scanning and Transmission Electron Microscopies

Yutaka Ohno and Seiji Takeda
WILEY-VCH (2012).


2011

論文

Systematic Morphology Changes of Gold Nanoparticles Supported on CeO2 during CO Oxidation
Tetsuya Uchiyama, Hideto Yoshida, Yasufumi Kuwauchi, Satoshi Ichikawa, Satoshi Shimada, Masatake Haruta and Seiji Takeda
Angew. Chem. Int. Ed. 50 (2011) 10157-10160.

A theoretical study of CO adsorption on gold by Hückel theory and density functional theory calculations
Keju Sun, Masanori Kohyama, Shingo Tanaka, and Seiji Takeda
J. Comput. Chem. 32 (2011) 3276-3282.

Temperature-Dependent Change in Shape of Platinum Nanoparticles Supported on CeO2 during Catalytic Reactions
Hideto Yoshida, Koji Matsuura, Yasufumi Kuwauchi, Hideo Kohno, Satoshi Shimada, Masatake Haruta, and Seiji Takeda
Appl. Phys. Express 4 (2011) 065001/1-3.


解説・総説

環境制御・透過電子顕微鏡法によるナノ粒子触媒のその場観察
竹田 精治,吉田 秀人
触媒 53(4) (2011) 235-240.

実環境下でのプロセス・特性評価のための収差補正・環境制御型透過電子顕微鏡とその応用
竹田 精治,吉田 秀人、桒内 康文、Stephan Kujawa
顕微鏡 46(1) (2011) 20-23.


著書

Optoelectronic Devices and Properties
Edited by Oleg Sergiyenko
Chapter 12: In-Situ Analysis of Optoelectronic Properties of Semiconductor Nanostructures and Defects in Transmission Electron Microscopes

Yutaka Ohno, Ichiro Yonenega, and Seiji Takeda
InTech (2011).

カーボンナノチューブ・グラフェンハンドブック 3.4 CNT成長のTEMその場観察
竹田 精治,吉田 秀人
フラーレン・ナノチューブ・グラフェン学会 編 コロナ社 (2011) 87-90.


2010

論文

Electrical breakdown of individual Si nanochains and silicide nanochains
Hideo Kohno, Takafumi Nogami, Seiji Takeda, Yutaka Ohno, Ichiro Yonenaga, and Satoshi Ichikawa
J. Nanosci. Nanotechnol. 10 (2010) 6655-6658.

In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
Hideo Kohno, Yuhki Mori, Seiji Takeda, Yutaka Ohno, Ichiro Yonenaga, and Satoshi Ichikawa
Appl. Phys. Express 3 (2010) 055001/1-3.

An attempt to characterize phase Q: Noble gas, Raman spectroscopy and transmission electron microscopy in residues prepared from the Allende meteorite
Jun-ichi Matsuda, Kazuhiko Morishita, Hidetomo Tsukamoto, Chie Miyakawa, Masayuki Nara, Sachiko Amari, Tetsuya Uchiyama, and Seiji Takeda
Geochim. Cosmochim. Acta 74 (2010) 5398-5409.


プロシーディング

Influence of the Preparation Methods for Pt/CeO2 and Au/CeO2 Catalysts in CO Oxidation
Satoshi Shimada, Takashi Takei, Tomoki Akita, Seiji Takeda, and Masatake Haruta
Stud. Surf. Sci. Catal. 175 (2010) 843-847.


著書

ナノシリコンの最新技術と応用展開 第5章 プロセス技術 3 シリコンナノワイヤ・チェインの作製技術
竹田 精治,河野 日出夫
シーエムシー出版 (2010) 236-245.


2009

論文

Transformation of a SiC nanowire into a carbon nanotube
Hideo Kohno, Yuhki Mori, Satoshi Ichikawa, Yutaka Ohno, Ichiro Yonenaga, and Seiji Takeda
Nanoscale 1 (2009) 344-346.
(Among the top ten accessed Nanoscale articles in December 2009)

Structure and stability of Au rods on TiO2(110) surfaces by first-principles calculations
Hongqing Shi, Masanori Kohyama, Shingo Tanaka, and Seiji Takeda
Phys. Rev. B 80 (2009) 155413/1-10.

Atomic-Scale Analysis on the Role of Molybdenum in Iron-Catalyzed Carbon Nanotube Growth
Hideto Yoshida, Takuma Shimizu, Tetsuya Uchiyama, Hideo Kohno, Yoshikazu Homma and Seiji Takeda
Nano Letters 9 (2009) 3810-3815.

Structural transformation of grains and grain boundaries with introducing boron atoms into CoPtCr magnetic layer investigated by ultrasoft pseudopotential calculation and transmission electron microscopy analysis
Kaoru Shoda and Seiji Takeda
J. Appl. Phys. 105 (2009) 063530/1-8.

Statistical and stochastic properties of stacking sequences in SiC nanowires
Hideo Kohno, Hideto Yoshida, Satoshi Ichikawa, and Seiji Takeda
J. Phys. Soc. Jpn. 78 (2009) 044601/1-5.


プロシーディング

In Situ Observation of Nucleation and Growth of Carbon Nanotubes from Iron Carbide Nanoparticles
Hideto Yoshida, Seiji Takeda, Tetsuya Uchiyama, Hideo Kohno, and Yoshikazu Homma
Mater. Res. Soc. Symp. Proc. 1142 (2009) 3-8.


2008

論文

Feasibility study for sidewall fluorination of SWCNTs in CF4 plasma
K. Shoda, H. Kohno, Y. Kobayashi, D. Takagi and S. Takeda
J. Appl. Phys. 104 (2008) 113529/1-6.

Atomic-scale in-situ observation of carbon nanotube growth from solid state iron carbide nanoparticles
Hideto Yoshida, Seiji Takeda, Tetsuya Uchiyama, Hideo Kohno, and Yoshikazu Homma
Nano Letters 8 (2008) 2082-2086.


プロシーディング

Structure determination of metallic nanoparticle catalysts by atomic scale in-situ environmental TEM
S. Takeda, H. Yoshida, T. Uchiyama and H. Kohno
Acta Cryst. A64 (2008) C531.

Direct Observation of Carbon Nanotube Growth by Environmental Transmission Electron Microscopy
Hideto Yoshida, Tetsuya Uchiyama, and Seiji Takeda
Springer Proc. Phys. 120 (2008) 209-212.

MOCVD growth of various SiC nanostructures
Shuhei Takao, Hideo Kohno, Satoshi Ichikawa, and Seiji Takeda
Appl. Surf. Sci. 254 (2008) 7630-7632.

Environmental transmission electron microscopy observations of the growth of carbon nanotubes under nanotube-nanotube and nanotube-substrate interactions
Hideto Yoshida, Tetsuya Uchiyama, Hideo Kohno, and Seiji Takeda
Appl. Surf. Sci. 254 (2008) 7586-7590.

Stability of the tunneling current across Si nanochain network
Hideo Kohno and Seiji Takeda
Appl. Surf. Sci. 254 (2008) 7573-7575.

Formation of multiple nanoscale twin boundaries that emit intense monochromatic light in indirect-gap AlGaAs epilayers
Y. Ohno, K. Shoda, T. Taishi, I. Yonenaga, and S. Takeda
Appl. Surf. Sci. 254 (2008) 7633-7637.

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si
Y. Ohno, T. Taishi, I. Yonenaga, and S. Takeda
Phys. Stat. Sol. (c) 5 (2008) 2944-2946.


解説・総説

高圧力・高分解能タイプの環境TEM の開発と応用
吉田 秀人、竹田 精治
顕微鏡 43(1) (2008) 20-23.

環境制御・透過型電子顕微鏡の現状と展望
竹田 精治
顕微鏡 43(1) (2008) 3-4.


2007

論文

Systematic characterization of carbon nanotubes functionalized in CF4 Plasma
Kaoru Shoda and Seiji Takeda
Jpn. J. Appl. Phys. 46 (2007) 7977-7982.

Environmental transmission electron microscopy observations of swinging and rotational growth of carbon nanotubes
Hideto Yoshida, Tetsuya Uchiyama, and Seiji Takeda
Jpn. J. Appl. Phys. Part2 46 (2007) L917-L919.

Non-Gaussian fluctuation in the charge transport of Si nanochains
Hideo Kohno and Seiji Takeda
Nanotechnology 18 (2007) 395706.

Intense monochromatic light emission from multiple nanoscale twin boundaries in indirect-gap AlGaAs epilayers
Yutaka Ohno, Naoki Yamamoto, Kaoru Shoda, and Seiji Takeda
Jpn. J. Appl. Phys. Part2. 46 (2007) L830-L832.

Fabricating p-n structures by growing highly doped Si nanoneedles on low doped Si substrates via fully self-organized process
Junichi Takeda, Hideo Kohno, and Seiji Takeda
Jpn. J. Appl. Phys. 46 (2007) 5386-5387.

Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy
J. Kikkawa, S. Takeda, Y. Sato, and M. Terauchi
Phys. Rev. B 75 (2007) 245317/1-5.

Inner potential fluctuation in SiC nanowires with modulated interior structure
H. Yoshida, H. Kohno, S. Ichikawa, T. Akita, and S. Takeda
Mater. Lett. 61 (2007) 3134-3137.

Growth of single-walled carbon nanotubes on silicon nanowires
H. Yoshida, T. Uchiyama, J. Kikkawa, and S. Takeda
Solid State Commun. 141 (2007) 632-634.

Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation
Y. Ohno, S. Takeda, T. Ichihashi, and S. Iijima
Jpn. J. Appl. Phys. Part1. 46 (2007) 434-439.

Mechanism of the growth of ZnSe nanowires with Fe catalysts
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, and Y. Kanemitsu
Solid State Commun. 141 (2007) 228-232.


プロシーディング

MOCVD growth of SiC nanowires aiming at the control of their shape
S. Takao, H. Kohno, and S. Takeda
Advanced Materials Research 26-28 (2007) 657-660.

Synthesis of single-walled carbon nanotube networks on silicon nanowires
H. Yoshida, T. Uchiyama, J. Kikkawa, H. Kohno, and S. Takeda
Materials Science Forum 561-565 (2007) 1205-1208.

Nanowire fabrication of silicon-based materials
H. Kohno and S. Takeda
Materials Science Forum 561-565 (2007) 1197-1199.

Electronic properties of nanoscale multiple twin boundaries in indirect-gap AlGaAs
Y.Ohno, N.Yamamoto, T.Taishi, I.Yonenaga, and S.Takeda
Physica B. 401-402 (2007) 270-274.

Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
Y.Ohno, T.Taishi, I.Yonenaga, and S.Takeda
Physica B. 401-402 (2007) 230-233.

Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
Y.Ohno, R.Hirai, S.Ichikawa, T.Taishi, I.Yonenaga, and S.Takeda
Physica B. 401-402 (2007) 650-653.

Diffusion and condensation of adatoms on inhomogeneous rough surfaces
K. Torigoe, Y. Ohno, H. Kohno, T. Ichihashi, and S. Takeda
Surf. Sci. 601 (2007) 5103-5107.

Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures
Y. Ohno, T. Shirahama , S. Takeda , A. Ishizumi , and Y. Kanemitsu
AIP Conference Proceedings 893 (2007) 115-116.

Transmission electron microscopy study on the surface properties of CNTs and fullerites exposed to CF4 plasma
K. Shoda and S. Takeda
Materials Research Society Symposium Proceedings 1018 (2007) 86-92.


2006

論文

Tunneling electron transport of silicon nanochains studied by in situ scanning electron microscopy
H. Kohno, S. Takeda, and T. Akita
Appl. Phys. Lett. 89 (2006) 233124/1-3.

Fabrication of iron silicide nanowires from nanowire templates
K. Yamamoto, H. Kohno, S. Takeda, and S. Ichikawa
Appl. Phys. Lett. 89 (2006) 083107.

Excavation rate of silicon surface nanoholes
Y. Ohno, S. Takeda, T. Ichihashi, and S. Iijima
J. Appl. Phys. 99 (2006) 126107/1-3.


プロシーディング

Mono- and multi-affine SiC nanowires
H. Kohno, H. Yoshida and T. Akita
e-Journal of Surface Science and Nanotechnology 4 (2006) 330-333.

Arrangement of gold nanoparticles on rough surfaces introduced by electron irradiation with high flux
K. Torigoe, Y. Ohno, T. Ichihashi, and S. Takeda
Physica B 376-377 (2006) 916-919.

SiC nanowires with self-affine, rough surfaces
H. Kohno and H. Yoshida
Physica B 376-377 (2006) 890-892.

Junctions of carbon nanotubes and silicon nanowires synthesized by ethanol-co chemical vapor deposition
H. Yoshida, T. Uchiyama, J. Kikkawa, S. Takeda, and Y. Homma
Materials Research Society Symposium Proceedings 963 (2006) 218-221


2005

論文

Image formation in a transmission electron microscope equipped with an environmental cell
H. Yoshida and S. Takeda
Phys. Rev. B 72 (2005) 195428/1-7.
Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 23

Carbon beads on semiconductor nanowires
H. Kohno, H. Yoshida, J. Kikkawa, K. Tanaka and S. Takeda
Jpn. J. Appl. Phys. Part 1, 44 (2005) 6862-6863.

Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy
Yutaka Ohno, Takeo Shirahama, Seiji Takeda, Atsushi Ishizumi, and Yoshihiko Kanemitsu
Appl. Phys. Lett. 87 (2005) 043105.
Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 5

Chains of crystalline-Si nanospheres: growth and properties
H. Kohno and S. Takeda
e-Journal of Surface Science and Nanotechnology 3 (2005) 131-140.

Growth rate of silicon nanowires
J. Kikkawa, Y. Ohno and S. Takeda
Appl. Phys. Lett. 86 (2005) 123109.
Virtual Journal of Nanoscale Science & Technology, Volume 11, Issue 12

Analysis of grain boundaries in CoCrTa and CoPtCrB HDD media by analytical transmission electron microscopy
Kaoru Shoda, Tohoru Matsubara and Seiji Takeda
Journal of Electron Microscopy 54 (2005) 1-9.


プロシーディング

Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces
K. Torigoe, Y. Ohno, T. Ichihashi, and S. Takeda
Springer Proc. Phys. 107 (2005) 393-396

Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy
N. Ozaki, Y. Ohno, J. Kikkawa and S. Takeda
Journal of Electron Microscopy 54(supplement 1) (2005) i25-i29.

Nucleation and growth processes of silicon nanowires
S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa and Y. Ohno
Mater. Res. Soc. Symp. Proc. 832 (2005) F9.1.1-F7.9.11.

Analysis of growth rate of silicon nanowires
J. Kikkawa, Y. Ohno and S. Takeda
Mater. Res. Soc. Symp. Proc. 832 (2005) F7.25.1-F7.25.6.

Complex diameter modulations in silicon carbide nanowire growth
H. Kohno and H. Yoshida
Mater. Res. Soc. Symp. Proc. 832 (2005) F9.5.1-F9.5.6.

Growth rate and critical diameter of silicon nanowires
J. Kikkawa, Y. Ohno and S. Takeda
Frontiers of Basic Science, Towards New Physics, Earth and Space Science, Mathematics. (ed. by H. Takabe, N.H. Luong and Y. Onuki, Osaka University Press, Mar. 2006, 253 - 254.

Size distribution of gold nanoparticles arranged on inhomogeneously roughened silicon
K. Torigoe, Y. Ohno and S. Takeda
Frontiers of Basic Science, Towards New Physics, Earth and Space Science, Mathematics. (ed. by H. Takabe, N.H. Luong and Y. Onuki, Osaka University Press, Mar. 2006, 335 - 336.

High-resolution transmission electron microscopy images of carbon nanotubes in source gases
H. Yoshida, H. Kohno and S. Takeda
Frontiers of Basic Science, Towards New Physics, Earth and Space Science, Mathematics. (ed. by H. Takabe, N.H. Luong and Y. Onuki, Osaka University Press, Mar. 2006, 357 - 358.


2004

論文

Multiscaling in semiconductor nanowire growth
H. Kohno and H. Yoshida
Physical Review E 70 (2004) 062601/1-3.
Virtual Journal of Nanoscale Science & Technology, Volume 10, Issue 26

Lévy-type complex diameter modulation in semiconductor nanowire growth
H. Kohno and H. Yoshida
Solid State Communications 132 (2004) 59-62.


プロシーディング

Formation of silicon/silicide/oxide nanochains and their properties studied by electron holography
H. Kohno, H. Yoshida, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka and S. Takeda
Thin Solid Films 464-465 (2004) 204-207.

Formation and properties of silicon/silicide/oxide nanochains
H. Kohno, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka and S. Takeda
Mater. Res. Soc. Symp. Proc. 789 (2004) N11.18.1-6.

Quantitative analysis of linear polarization by means of polarized cathodoluminescence spectroscopy in a TEM
Y. Ohno and S. Takeda
Inst. Phys. Conf. Ser. 180 (2004) 569-572.

Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs
Y. Ohno, N.Adachi, and S. Takeda
Inst. Phys. Conf. Ser. 180 (2004) 187-190 .


2003

論文

Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites
H. Kohno, N. Ozaki, H. Yoshida, K. Tanaka and S. Takeda
Crystal Research and Technology 38 (2003) 1082-1086.

Infusing metal into self-organized semiconductor nanostructures
H. Kohno and S. Takeda
Appl. Phys. Lett. 83 (2003) 1202-1203.
Virtual Journal of Nanoscale Science & Technology, Volume 8, Issue 7

Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs
Y. Ohno, N.Adachi, and S. Takeda
Appl. Phys. Lett. 83 (2003) 54-56.

Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation
J. Yamasaki, S. Takeda, Y. Ohno and Y. Kimura
Philos. Mag. A 83 (2003) 151-163.

Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template
S. Takeda, K. Ueda, N. Ozaki and Y. Ohno
Appl. Phys. Lett. 82 (2003) 979-981.
Virtual Journal of Nanoscale Science & Technology, Volume 7, Issue 7


プロシーディング

Formation of extended defects in polycrystalline SiGe by electron irradiation
J. Kikkawa, J. Yamasaki, Y. Ohno, M. Kohyama, and S. Takeda
Solid State Phenomena 93 (2003) 361-366.


2002

論文

Elemental process of amorphization induced by electron irradiation in Si
J. Yamasaki, S. Takeda and K. Tsuda
Phys. Rev. B 65 (2002) art.no.115213 (1-10).

Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
Y. Ohno and S. Takeda
J. Electron Microsc. 51 (2002) 281-290.

One phonon Raman scattering studies of chains of crystalline-Si nanospheres
H. Kohno, T. Iwasaki, Y. Mita and S. Takeda
J. Appl. Phys. 91 (2002) 3232-3235.
Virtual Journal of Nanoscale Science & Technology, Volume 5, Issue 10

Silicon nanoneedles grown by a simple thermal treatment using metal-sulfur catalysts
H. Kohno and S. Takeda
Jpn. J. Appl. Phys. 41 (2002) 577-578.


プロシーディング

Ab-initio calculation of Si-K and Si-Li ELNES edges in an extended inactive defect model of crystalline silicon
Y. Chen, S-D Mo, M. Kohyama, H. Kohno, S. Takeda and W. Y. Ching.
Mater. Trans. 43 (2002) 1430-1434.

Novel amorphization process in silicon induced by electron irradiation
J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki and S. Takeda
J. Non-crystall. Solids 299-302 (2002) 793-797.

Growth, structure and properties of chains of crystalline-Si nanospheres
K. Kohno, T. Iwasaki and S. Takeda
Mater. Sci. Eng. B 96 (2002) 76-79.


解説・総説

電子照射によるシリコンのアモルファス化とその素過程
山崎 順,竹田 精治
日本結晶学会誌 44(4) (2002) 213-224.


著書

物理学への誘い 大貫惇睦 編 2章 力学
竹田 精治(分担執筆)
大阪大学出版会 (2002).

電子顕微鏡法の実践と応用写真集 シリコンナノ結晶鎖
河野 日出夫,竹田 精治
日本鉄鋼協会,日本金属学会 (2002) 188.

ナノ粒子の製造、評価、応用、機器の最新情報 ナノ触媒を利用したシリコン球体チェインの作製
竹田 精冶,河野 日出夫
シーエムシー出版 (2002) 44-48.


2001

プロシーディング

Fabrication of nanohole periodic multilayer structure on silicon surface toward photonic crystal
Y. Ohno, N. Ozaki and S. Takeda
Physica B 308-310 (2001) 1222-1225.

Role of metal impurities in the growth of chains of crystalline-silicon nanospheres
H. Kohno, T. Iwasaki, Y. Mita, M. Kobayashi, S. Endo and S. Takeda
Physica B 308-310 (2001) 1097-1099.

Observation of silicon surface nanoholes by scanning tunneling microscopy
N. Ozaki, Y. Ohno, M. Tanbara, D. Hamada, J. Yamasaki and S. Takeda
Surf. Sci. 493 (2001) 547-554.

Formation process of silicon surface nanoholes
Y. Ohno and S. Takeda
Inst. Phys. Conf. Ser. 169 (2001) 395-398.

Control of the arrangement of nanoholes on silicon surface
Y. Ohno, T. Ichihashi and S. Takeda
Mater. Res. Soc. Symp. Proc. 638 (2001) F14.36.1.

Growth mechanism of chains of silicon nanocrystallites
H. Kohno, K. Tanaka and S. Takeda
Mater. Res. Soc. Symp. Proc. 638 (2001) F13.3.1.


2000

論文

Formation of microcracks in cubic boron nitride
M. Aki, Y. Ohno, H. Kohno and S. Takeda
Philos. Mag. A 80 (2000) 747-758.

Plasmon-loss imaging of chains of crystalline-silicon nanospheres and silicon nanowires
H. Kohno, S. Takeda and K. Tanaka
J. Electron Microsc. 49 (2000) 275-280.

Periodic instability in growth of chains of crystalline-silicon nanospheres
H. Kohno and S. Takeda
J. Crystal Growth 216 (2000) 185-191.

Metal-mediated growth of alternate semiconductor-insulator nanostructures
H. Kohno, T. Iwasaki, and S. Takeda
Solid State Commun. 116 (2000) 591-594.


プロシーディング

Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2
Y. Ohno and S. Takeda
Mater. Res. Soc. Symp. Proc. 588 (2000) 105-110.

Optical properties of Si nanowires on a Si{111} surface
N. Ozaki, Y. Ohno and S. Takeda
Mater. Res. Soc. Symp. Proc. 588 (2000) 99-10.

Formation model for microstructures in a (Ga, In)P natural superlattice
Y. Kuno, S. Takeda, M. Hirata, Y. Ohno, N. Hosoi and K. Shimoyama
Inst. Phys. Conf. Ser. 164 (2000) 287-290.

Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope
Y. Ohno and S. Takeda
Inst. Phys. Conf. Ser. 164 (2000) 175-178.

Formation of microcracks in an annealed cubic boron nitride
M. Aki, Y. Ohno and S. Takeda
Inst. Phys. Conf. Ser. 164 (2000) 93-96.

New self-organized nanostructure: Chain of crystalline-silicon nanospheres
H. Kohno, S. Takeda and T. Iwasaki
Mater. Res. Soc. Symp. Proc. 571 (2000) 293-298.


解説・総説

新しいシリコン系ナノ構造
竹田 精治
応用物理 69(1) (1997) 48-51.


1999

論文

Amorphization in silicon by electron irradiation
S. Takeda and J. Yamasaki
Phys. Rev. Lett. 83 (1999) 320-323.

First-principles calculation of the self-interstitial clusters I4 in Si
M. Kohyama and S. Takeda
Phy. Rev. B 60 (1999) 8075-8080.

Vacancy-migration-mediated disordering in CuPt-ordered (Ga, In)P studied by in situ optical spectroscopy in a transmission electron microscope
Y. Ohno, Y. Kawai and S. Takeda
Phys. Rev. B 59 (1999) 2694-2699.

Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP2 and (Al, Ga)InP2 epitaxiallayers
S. Takeda, Y. Kuno, N. Hosoi and K. Shimoyama
J. Cryst. Growth 205 (1999) 11-19.


プロシーディング

Electron irradiation effects in Si observed at 4.2 - 25K by means of in-situ transmission electron microscopy
S. Takeda, J. Yamasaki, Y. Kimura
Physica B 273-274 (1999) 476-479.

Point defect reaction in AlGaInP STQW lasers enhanced by laser operation
A. Ihara, Y. Ohno, S. Takeda, S. Nagao, R. Diffily, Y. Satoh, K. Shimoyama and N. Hosoi
Physica B 273-274 (1999) 1050-1053.

Structural properties of amorphous silicon produced by electron irradiation
J. Yamasaki and S. Takeda
Mater. Res. Soc. Symp. Proc. 557 (1999) 231-236.

VLS growth of Si nanowhiskers on a H-terminated Si {111} surface
N. Ozaki, Y. Ohno, S. Takeda and M. Hirata
Mater. Res. Soc. Symp. Proc. 536 (1999) 305-310.

TEM observation of recrystallization of amorphous silicon formed by gold implantation
K. Matsuoka, H. Kohno and S. Takeda
Jpn. Inst. Metal Proc. 12 (1999) 1227-1230.


1998

論文

Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface
N. Ozaki, Y. Ohno and S. Takeda
Appl. Phys. Lett. 73 (1998) 3700-3702.

Self-organized chain of crystalline-silicon nanospheres
H. Kohno and S. Takeda
Appl. Phys. Lett. 73 (1998) 3144-3146.

Detection of inactive defects in crystalline silicon by high-resolution transmission-electron energy-loss spectroscopy
H. Kohno, T. Mabuchi, S. Takeda, M. Kohyama, M. Terauchi and M. Tanaka
Phys. Rev. B 58 (1998) 10338-10342.

Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS
H. Kohno, T. Mabuchi, S. Takeda, M. Kohyama, M. Terauchi, and M. Tanaka
J. Electron Microsc. 47 (1998) 311-317.

Structure analysis of defects in nanometer space inside a crystal :Creation and agglomeration of point defects in Si and Ge revealed by high resolution electron microscopy
S. Takeda
Microscopy Research and Technique 40 (1998) 313-335.


プロシーディング

Boron clusters in a complex defect in silicon
M. Okamoto, K. Takayanagi and S. Takeda
Mater. Res. Soc. Symp. Proc. 510 (1998) 343-348.

Tight-binding calculations of complex defects in semiconductors: Comparison with ab initio results
M. Kohyama, N. Arai and S. Takeda
Mater. Res. Soc. Symp. Proc. 491 (1998) 287-298.

Electron-irradiation-induced disordering of Cu-Pt-ordered GaInP studied by TEM-mode optical spectroscopy
Y. Ohno, Y. Kawai and S. Takeda
Proc. 10th Conf. Semicond. and Insulating Mater. (SIMC-X), 173-176.


1997

論文

Nanoholes on silicon surface created by electron irradiation under ultrahigh vacuum environment
S. Takeda, K. Koto, S. Iijima and T. Ichihashi
Phys. Rev. Lett. 79 (1997) 2994-2997.

Self interstitial clustering in crystalline silicon
N. Arai, S. Takeda and M. Kohyama
Phys. Rev. Lett. 78 (1997) 4265-4268.

Effects of O2 on the {113} defect formation in Si observed by in-situ ultrahigh vacuum transmission electron microscopy
K. Koto, S. Takeda, T. Ichihashi and S. Iijima
Appl. Phys. Lett. 71 (1997) 1661-1663.

Diffusion process of interstitial atoms in an electron-irradiated InP studied by transmission electron microscopy
Y. Ohno, N. Saito, S. Takeda and M. Hirata
Jpn. J. Appl. Phys. 36 (1997) 5628-5632.

Extended platelets on {111} in GaAs created by He-ion implantation followed by low temperature annealing
T. Nomachi, S. Muto, M. Hirata, H. Kohno, J. Yamasaki and S. Takeda
Appl. Phys. Lett. 71 (1997) 255-257.


プロシーディング

High resolution EELS study of extended defects in silicon
H. Kohno, N. Arai, T. Mabuchi, M. Hirata, S. Takeda, M. Kohyama, M. Terauchi and M. Tanaka
Mater. Sci. Forum 258-263 (1997) 547-552.

Electron irradiation effects in silicon thin foils under ultra high vacuum environment
S. Takeda, K. Koto, M. Hirata, T. Kuno, S. Iijima and T. Ichihashi
Mater. Sci. Forum 258-263 (1997) 553-558.

Diffusion process of interstitial atoms in InP studied by transmission electron microscopy
Y. Ohno, S. Takeda and M Hirata
Matar. Res. Soc. Symp. Proc. 442 (1997) 435-440.

Modeling of self-interstitial clusters and their formation mechanism in Si
S. Takeda, N. Arai and J. Yamasaki
Mater. Sci. Forum 258-263 (1997) 535-540.

The structures of extended defects in Si and other materials studied by HRTEM
S. Takeda
Proc. 10th Int. Conf. Microscopy of Semiconducting Materials, Oxford, April 7-10, 1997, Inst. Phys. Conf. Ser. 157 (1997) 25-34.


解説・総説

透過電子顕微鏡内その場可視分光装置の開発とその応用
竹田 精治
日本結晶学会誌 39(5) (1997) 337-346.

透過電子顕微鏡内その場可視分光装置の開発とその応用
竹田 精治, 大野 裕
電子顕微鏡 32(2) (1997) 107-109.


1996

論文

Clustering process of interstitial atoms in gallium phosphide studied by transmission electron microscopy
Y. Ohno, S. Takeda and M. Hirata
Phys. Rev. B 54 (1996) 4642-4649.

Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor
Y. Ohno, M. Hirata, S. Takeda, R. Fujimoto, and R. Oshima
J. Electron Microsc. 45 (1996) 380-387.

Study of electron-irradiation-induced defects in GaP by in-situ optical spectroscopy in a transmission electron microscope
Y. Ohno and S. Takeda
J. Electron Microsc. 45 (1996) 73-78.

Disordering of natural superlattice in (Ga, In)P induced by electron irradiation
N. Noda and S. Takeda
Phys. Rev. B 53 (1996) 7197-7204.


1995

論文

Hydrogen induced platelets in silicon studied with transmission electron microscopy
S. Muto, S. Takeda and M. Hirata
Philos. Mag. A 72 (1995) 1057-1074.

A new apparatus for in-situ photoluminescence spectroscopy in a transmission electron microscope
Y. Ohno and S. Takeda
Rev. Sci. Instruments 66 (1995) 4866-4869.

A new stable defect structure on the {001} plane in germanium formed by deuteron irradiation
S. Muto and S. Takeda
Philos. Mag. Lett. 72 (1995) 99-104.

Tight-binding study of the {113} planar interstitial defects in Si
M. Kohyama and S. Takeda
Phys. Rev. B 51 (1995) 13111-13116.

Agglomeration of self-interstitials in Si observed at 450°C by high-resolution transmission electron microscopy
S. Takeda and T. Kamino
Phys. Rev. B 51 (1995) 2148-2152.


プロシーディング

Extended defect formation in silicon and germanium induced by light gas ion irradiation studied with transmission electron microscopy
S. Muto, S. Takeda and M. Hirata
Mater. Sci. Forum 196-201 (1995) 1171-1176.

Clustering process of point defects in GaP studied by transmission electron microscopy
Y. Ohno, S. Takeda and M. Hirata
Mater. Sci. Forum 196-201 (1995) 1279-1284.

Disordering of CuPt-type ordered structure in GaInP under electron irradiation
N. Noda and S. Takeda
Inst. Phys. Conf. Ser. 146 (1995) 245-248.


1994

論文

Electron diffraction channeling effect on defect formation in Si with 110 zone axis incidence
S. Takeda and S. Horiuchi
Ultramicrosc. 56 (1994) 144-162.

Interstitial defects on {113} in Si and Ge: Line defect configuration incorporated with a self-interstitial atom chain
S. Takeda, M. Kohyama and K. Ibe
Philos. Mag. A 70 (1994) 287-312.


プロシーディング

Calculation of the atomic and electronic structure of the {113} planar interstitial defects in Si
M. Kohyama and S. Takeda
Solid State Phenomena 37-38 (1994) 163-168.

Structural study of hydrogen induced platelet in Si and Ge by transmission electron microscopy
S. Muto, S. Takeda and M. Hirata
Mater. Sci. Forum 143-4 (1994) 897-902.


1993

プロシーディング

Atomic structure and energy of the {113} interstitial defects in silicon
M. Kohyama and S. Takeda
Proc. Computer Aided Innovation of New Materials II, Elsevier Science Publishers B. V. (1993) 615-618.

Calculation of the structure and properties of the {113} planar interstitial defects in Si
M. Kohyama and S. Takeda
Proc. Advanced Materials 1993, III/A: Computations, Glassy Materials, Microgravity and Non-Destructive Testing, edited by T. Masumoto et al. 355-360.

HRTEM study of the {111} planar defect
Y. Ohno, S. Takeda and S. Horiuchi
Inst. Phys. Conf. Ser. 134 (1993) 527-530.

Structure refinement of the atomic model of the {113} defect in Si
S. Takeda and M. Kohyama
Inst. Phys. Conf. Ser. 134 (1993) 33-36.