Institute of Scientific and Industrial Research, Osaka University

   Oiwa Laboratory


2021


Master thesis

  • Junwei Gao
    Detection of potential fluctuations using dispersive gate sensing in GaAs heterostructure-based quantum devices

  • Satoshi Yanagidani
    Fabrication and evaluation of a lateral P-(i)-N junction using an undoped GaAs/AlGaAs quantum well

  • Genki Fukuda
    Pauli spin blockade and illumination effects in an undoped GaAs/AlGaAs quanatum dot

  • Hiroki Idenishi
    Superconducting quantum point contact in an epitaxially grown Al/InAs quantum well






2020


Master thesis

  • Sanshiro Fujimori
    Magnetic characterization of GaN/TbN superlattice structures grown by molecular beam epitaxy

  • Akifumi Okamoto
    Impact of Gd/N supply ratio on magnetic properties of GdN/GaN magnetic/nonmagnetic semiconductor superlattices

  • Yuta Matsumoto
    Spin-orbit induced spin manipulation enhanced by inter-dot tunneling





Bachelor thesis

  • Nozomu Hayashi
    Fabrication of electrodes for superconducting junction to two dimensionsional electrongas in conventional/inverted HEMT structures




2019


Master thesis

  • Moe Tanaka
    Electric transport and side-gate effects in Si self-assembled quantum dots

  • Tomoki Chatani
    Detection of photo-excited spins in a (110)-GaAs/AlGaAs QW by using inverse spin Hall effect

  • Ryota Hayashi
    Irradiation effects on gate-induced two-dimensional electrons in an un-doped GaAs/AlGaAs quatnum well





Bachelor thesis

  • Hiroki Idenishi
    Detection of light-excited charge in InAs self-assembled quantum dots

  • Genki Fukuda
    Fabrication and photostability evaluation of field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts





2018


Master thesis

  • Yuhei Kurokawa
    Forming GaN nano-rod formation using plazma enhanced molecular beam epitaxy

  • Masaki Tada
    Evaluation of InSb quantum well substrate and fabrication of side gate type quantum point contact

  • Yumi Aomatsu
    Crystal growth and magnetic, magneto-optic characterization of GaSmN

  • Kazutoshi Kawaguchi
    Fabrication and transport measurements of SiGe self-assembled quantum dot devices

  • Seiu Higashide
    Fabrication and measurement of lateral spin valves containing a quantum dot

  • Ryo Yanagidani
    Growth and magnetic properties of dilute magnetic semiconductor GaTbN

  • Rio Fukai
    Surface plasmon antennas for efficient conversion from photon to electron using a lateral quantum dot (accelerated graduation)



Bachelor thesis

  • Sanshiro Fujimori
    Fabrication and characterization of GaN/GaTbN super lattice using plasma-enhanced molecular-beam epitaxy
  • Takuya Yoshihara
    Fabrication of a superconductor junction to a GaAs two-dimensional electron system




2017


Master thesis

  • Tomohiro Nakagawa
    (110) GaAs quantum well substrate for photon-electron spin quantum state conversion

  • Yuta Miyazaki
    Effect of carrier concentration on the properties of GaSmN dilute magnetic semiconductor

  • Ryoki Shikishima
    Quantum transport phenomena and Kondo effect in SiGe self-assembled quantum dots



Bachelor thesis

  • Rio Fukai
    Surface plasmon for high efficiency photon-electron conversion in lateral quantum dots

  • Ichiro Toyoshima
    Channel layer formation in a nitride semiconductor based lateral spin valve structure



2016


Master thesis

  • Kentaro Dehara
    Crystal growth and property evaluation of GaSmN dilute magnetic semiconductor
  • Takashi Hirayama
    Single-electron charge sensing in InAs self-assembled quantum dots




Bachelor thesis

  • Yuhei Kurokawa
    Forming isolated GaN nano-rods using plasma enhanced molecular beam epitaxy
  • Masaki Tada
    Fabrication and evaluation of side-gate type quantum point contacts
  • Panin Pienroj
    Fabrication and characterization of a photo-electron spin detector using quantum point contacts




2015


Bachelor thesis

    Masamitsu Kimura
    Fabrication and evaluation of Fe4N/GaN(0001) interface grown by molecular beam epitaxy


    Ryoki Shikishima
    Fabrication and transport measurement on single-electron transistors using InAs self-assembled quantum dots